PDRQL8KCBF12-00 vs K4RAH086VB-BCWM 对比
详细并排对比 PDRQL8KCBF12-00 出自 Samsung Electronics 和 K4RAH086VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ 量产中规格对比
| 参数 | PDRQL8KCBF12-00 | K4RAH086VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $18.00 | $44.55 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 7200 MT/s | 5600 Mbps |
| 电源电压 | 1.1 V | 1.1 V |
| 封装 | FBGA | FBGA-82 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: Operating temperature range] | Commercial temperature range (per datasheet) |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | 32 (BL32, DDR5 standard) |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| 接口 | Pseudo-differential DQ | DDR5 (parallel) |
| Process Technology | 10nm-class | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 存储容量 | — | 16 Gb |
| Technology | — | DRAM (volatile) |
| Speed Grade | — | BCWM |
| ECC | — | On-die ECC |
| 生命周期状态 | — | Active |
| Sub-channel Architecture | — | Dual independent 32-bit sub-channels (per DDR5 spec) |