PDRQL8KCBF12-00 vs K4RAH086VE-BCWM Comparison
Detailed side-by-side comparison of PDRQL8KCBF12-00 by Samsung Electronics and K4RAH086VE-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ ActiveSpecification Comparison
| Parameter | PDRQL8KCBF12-00 | K4RAH086VE-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $18.00 | $7.60 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 7200 MT/s | 5600 Mbps |
| Supply Voltage | 1.1 V | — |
| Package | FBGA | 82-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: Operating temperature range] | 0C to +85C |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | — |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| Interface | Pseudo-differential DQ | — |
| Process Technology | 10nm-class | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Generation | — | DDR5 |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Lifecycle Status | — | Mass Production |
| Manufacturer | — | Samsung Electronics |