PDRQL8KCBF12-00 vs K4RAH086VE-BCWM 对比
详细并排对比 PDRQL8KCBF12-00 出自 Samsung Electronics 和 K4RAH086VE-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ 量产中规格对比
| 参数 | PDRQL8KCBF12-00 | K4RAH086VE-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $18.00 | $7.60 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 7200 MT/s | 5600 Mbps |
| 电源电压 | 1.1 V | — |
| 封装 | FBGA | 82-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: Operating temperature range] | 0C to +85C |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | — |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| 接口 | Pseudo-differential DQ | — |
| Process Technology | 10nm-class | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Generation | — | DDR5 |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS 延迟 | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| 生命周期状态 | — | Mass Production |
| Manufacturer | — | Samsung Electronics |