STBV45 vs STBV45-AP Comparison

Detailed side-by-side comparison of STBV45 by STMicroelectronics and STBV45-AP by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter STBV45 STBV45-AP
Brand STMicroelectronics STMicroelectronics
Category Transistors Transistors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.16
Transistor Type NPN Bipolar Junction Transistor (BJT) NPN Bipolar Junction Transistor (BJT)
Collector-Base Voltage (Vcbo) 400 V [DATA_NEEDED: VCBO value]
Collector-Emitter Voltage (Vceo) 400 V 400 V
Emitter-Base Voltage (Vebo) [DATA_NEEDED: VEBO rating] [DATA_NEEDED: VEBO value]
Continuous Collector Current (IC) 750 mA 0.75 A
Power Dissipation (Pd) 950 mW —
DC Current Gain (hFE) [DATA_NEEDED: minimum hFE value] [DATA_NEEDED: hFE min/typ/max]
Transition Frequency (ft) [DATA_NEEDED: fT value] [DATA_NEEDED: fT]
Collector-Emitter Saturation Voltage (Vce(sat)) [DATA_NEEDED: VCE(sat) value] —
Operating Temperature Range [DATA_NEEDED: junction temperature range] [DATA_NEEDED: Tj max]
Package TO-92-3 (through-hole) TO-92AP (Ammopack, radial leads)
Pinout Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) —
Mounting Type Through Hole Through-Hole (Ammopack tape)
RoHS Status [DATA_NEEDED: RoHS compliance status] Compliant
Technology Multi-epitaxial planar with cellular emitter structure High-voltage multi-epitaxial planar, cellular emitter
Peak Collector Current — [DATA_NEEDED: ICM value]
Total Power Dissipation (Ptot) — [DATA_NEEDED: Ptot at 25C]
Switching Speed — Very high (fast-switching grade)
Reverse Bias SOA — Wide RBSOA per datasheet

Datasheets & Resources

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