STBV45 vs STBV45-AP 比較
詳細な並列比較: STBV45 メーカー: STMicroelectronics および STBV45-AP メーカー: STMicroelectronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
STMicroelectronics
STBV45 - 400V NPN High-Voltage Fast-Switching BJT | STMicroelectronics
STBV45 ✓ 生産中STMicroelectronics
STBV45-AP - 400V NPN High-Voltage Fast-Switch Transistor | STMicroelectronics
STBV45-AP ✓ 生産中仕様比較
| パラメータ | STBV45 | STBV45-AP |
|---|---|---|
| ブランド | STMicroelectronics | STMicroelectronics |
| カテゴリ | Transistors | Transistors |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.31 | $0.16 |
| トランジスタタイプ | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| コレクタ-ベース間電圧（Vcbo） | 400 V | [DATA_NEEDED: VCBO value] |
| コレクタ-エミッタ間電圧（Vceo） | 400 V | 400 V |
| エミッタ-ベース間電圧（Vebo） | [DATA_NEEDED: VEBO rating] | [DATA_NEEDED: VEBO value] |
| Continuous Collector Current (IC) | 750 mA | 0.75 A |
| Power Dissipation (Pd) | 950 mW | — |
| DC Current Gain (hFE) | [DATA_NEEDED: minimum hFE value] | [DATA_NEEDED: hFE min/typ/max] |
| 遷移周波数（ft） | [DATA_NEEDED: fT value] | [DATA_NEEDED: fT] |
| コレクタ-エミッタ間飽和電圧（Vce(sat)） | [DATA_NEEDED: VCE(sat) value] | — |
| 動作温度範囲 | [DATA_NEEDED: junction temperature range] | [DATA_NEEDED: Tj max] |
| パッケージ | TO-92-3 (through-hole) | TO-92AP (Ammopack, radial leads) |
| Pinout | Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) | — |
| 実装タイプ | Through Hole | Through-Hole (Ammopack tape) |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Technology | Multi-epitaxial planar with cellular emitter structure | High-voltage multi-epitaxial planar, cellular emitter |
| Peak Collector Current | — | [DATA_NEEDED: ICM value] |
| Total Power Dissipation (Ptot) | — | [DATA_NEEDED: Ptot at 25C] |
| Switching Speed | — | Very high (fast-switching grade) |
| Reverse Bias SOA | — | Wide RBSOA per datasheet |