STBV45 vs STBV45-AP 对比
详细并排对比 STBV45 出自 STMicroelectronics 和 STBV45-AP 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
STMicroelectronics
STBV45 - 400V NPN High-Voltage Fast-Switching BJT | STMicroelectronics
STBV45 ✓ 量产中STMicroelectronics
STBV45-AP - 400V NPN High-Voltage Fast-Switch Transistor | STMicroelectronics
STBV45-AP ✓ 量产中规格对比
| 参数 | STBV45 | STBV45-AP |
|---|---|---|
| 品牌 | STMicroelectronics | STMicroelectronics |
| 分类 | Transistors | Transistors |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.31 | $0.16 |
| 晶体管类型 | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| 集电极-基极电压（Vcbo） | 400 V | [DATA_NEEDED: VCBO value] |
| 集电极-发射极电压（Vceo） | 400 V | 400 V |
| 发射极-基极电压（Vebo） | [DATA_NEEDED: VEBO rating] | [DATA_NEEDED: VEBO value] |
| Continuous Collector Current (IC) | 750 mA | 0.75 A |
| Power Dissipation (Pd) | 950 mW | — |
| DC Current Gain (hFE) | [DATA_NEEDED: minimum hFE value] | [DATA_NEEDED: hFE min/typ/max] |
| 过渡频率（ft） | [DATA_NEEDED: fT value] | [DATA_NEEDED: fT] |
| 集电极-发射极饱和电压（Vce(sat)） | [DATA_NEEDED: VCE(sat) value] | — |
| 工作温度范围 | [DATA_NEEDED: junction temperature range] | [DATA_NEEDED: Tj max] |
| 封装 | TO-92-3 (through-hole) | TO-92AP (Ammopack, radial leads) |
| Pinout | Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) | — |
| 安装类型 | Through Hole | Through-Hole (Ammopack tape) |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Technology | Multi-epitaxial planar with cellular emitter structure | High-voltage multi-epitaxial planar, cellular emitter |
| Peak Collector Current | — | [DATA_NEEDED: ICM value] |
| Total Power Dissipation (Ptot) | — | [DATA_NEEDED: Ptot at 25C] |
| Switching Speed | — | Very high (fast-switching grade) |
| Reverse Bias SOA | — | Wide RBSOA per datasheet |