W634GU6RB-12 vs K4B4G1646D-BPH90 Comparison
Detailed side-by-side comparison of W634GU6RB-12 by Winbond and K4B4G1646D-BPH90 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ ActiveSpecification Comparison
| Parameter | W634GU6RB-12 | K4B4G1646D-BPH90 |
|---|---|---|
| Brand | Winbond | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.50 | $7.60 |
| Memory Type | SDRAM - DDR3L | DDR3L SDRAM |
| Memory Size | 4Gbit | — |
| Organization | 256M x 16 | 32M x 16 |
| Interface | Parallel | — |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35V | 1.35V (DDR3L) |
| Package | 96-VFBGA (7.5x13) | 96FBGA |
| Speed Grade | DDR3L-1600 (11-11-11) | — |
| Operating Temperature | -40°C to +95°C (12I), -40°C to +105°C (12J) | 0°C to +85°C |
| RoHS | Compliant | — |
| Halogen Free | Yes | Yes |
| Mounting Type | Surface Mount | — |
| Number of Pins | 96 | — |
| Data Rate | 1600 MT/s | 2133 Mb/s per pin |
| Density | — | 4Gb |
| Number of Banks | — | 8 |
| CAS Latency | — | Programmable up to 14 |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Lead-Free | — | Yes |
| RoHS Compliant | — | Yes |