W634GU6RB-12 vs K4B4G1646D-BPH90 对比
详细并排对比 W634GU6RB-12 出自 Winbond 和 K4B4G1646D-BPH90 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | W634GU6RB-12 | K4B4G1646D-BPH90 |
|---|---|---|
| 品牌 | Winbond | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.50 | $7.60 |
| 存储器类型 | SDRAM - DDR3L | DDR3L SDRAM |
| 存储容量 | 4Gbit | — |
| 存储组织 | 256M x 16 | 32M x 16 |
| 接口 | Parallel | — |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| 电源电压 | 1.35V | 1.35V (DDR3L) |
| 封装 | 96-VFBGA (7.5x13) | 96FBGA |
| Speed Grade | DDR3L-1600 (11-11-11) | — |
| 工作温度 | -40°C to +95°C (12I), -40°C to +105°C (12J) | 0°C to +85°C |
| RoHS | Compliant | — |
| 无卤 | Yes | Yes |
| 安装类型 | Surface Mount | — |
| 引脚数 | 96 | — |
| 数据速率 | 1600 MT/s | 2133 Mb/s per pin |
| Density | — | 4Gb |
| Number of Banks | — | 8 |
| CAS 延迟 | — | Programmable up to 14 |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Lead-Free | — | Yes |
| RoHS Compliant | — | Yes |