MOSFETs
Produkte (1294)
MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP
The NXP MRF6S27015NR1 is a 3 W average, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for 2300-2700 MHz W-CDMA base-station transmitter final-stage applications. Housed in a TO-270-2 plastic over-molded package (case 1265-09, style 1), it provides 14 dB typical gain at 2.6 GHz while delivering 3 W of average output power from a 28 V rail, all in a surface-mount lateral MOSFET layout. RF power MOSFETs are a class of discrete semiconductor devices designed specifically for high-frequency amplification of modulated signals such as W-CDMA, LTE, and WiMAX. They differ from small-signal MOSFETs in using a lateral N-channel structure with very low parasitic capacitance and inductance, allowing efficient operation into the multi-GHz range. They occupy a place in the hierarchy: RF power MOSFET -> RF power transistor -> discrete semiconductor -> semiconductor device. Key specifications of the MRF6S27015NR1 include a maximum drain-source voltage of 68 V, a typical quiescent drain current of 160 mA at 28 V, an operating frequency range of 2300-2700 MHz, an output power of 3 W average in W-CDMA with 14 dB power gain, and a ruggedness capability against 10:1 VSWR mismatch at its rated operating voltage. The device is built on NXP's HV6 lateral MOSFET process, optimized for Doherty amplifier configurations in macro-cell base-station radios. Architecturally, the MRF6S27015NR1 uses a high-breakdown lateral DMOS cell layout that provides high drain efficiency (~30% at 2.6 GHz into W-CDMA) and excellent thermal coupling between the active die region and the plastic over-mold. The matched input and 50-ohm-compatible output impedance simplifies PCB integration, allowing engineers to drop the part into existing 2.6 GHz L-PAMR or small-cell reference designs with minimal retuning. Typical applications include W-CDMA, LTE, and WiMAX base-station transmitter final stages, particularly the carrier and peaking devices in a Doherty configuration. Its 3 W average output capability and high gain also make it suitable for driver stages in higher-power macro-cell amplifiers, repeater units, and small-cell pico-cell radios operating in the 2.3-2.7 GHz wireless bands. The principal design trade-off is thermal: 28 V operation at 3 W average gives rise to roughly 7-10 W peak dissipation during W-CDMA peaks (PAPR ~10 dB). Engineers must provide adequate copper thermal vias beneath the TO-270-2 package, sized to keep the junction below 150 C during worst-case conditions. This page synthesizes distributor pricing, drop-in and pin-compatible alternatives, and practical thermal/RF layout notes beyond what the manufacturer datasheet alone offers.
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
The NXP MRF6S27050HR5 is a 7-watt RF power LDMOS transistor optimized for WCDMA and other 2.62 GHz wireless infrastructure applications, housed in the NI-780H-2L ceramic package. It is rated for 28 V typical operation, delivers 16 dB power gain at 2.62 GHz, and is tested at 500 mA quiescent current for WCDMA driver and final-stage amplifier designs. The device is part of NXP's MRF6S series of high-frequency LDMOS RF power transistors, a family widely used in cellular base-station power amplifiers. An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET architecture designed to deliver high RF output power at high frequencies. LDMOS devices sit within the broader power MOSFET taxonomy (power MOSFET -> RF MOSFET -> LDMOS) and dominate base-station PA design because of their high breakdown voltage, high gain, and excellent thermal performance in ceramic air-cavity packages such as the NI-780 family. Key features of the MRF6S27050HR5 include 68 V drain-source breakdown rating for high-voltage ruggedness, a 16 dB typical power gain that simplifies multi-stage PA line-ups, and excellent WCDMA linearity performance verified at 28 V / 500 mA bias. The device is internally input-matched, allowing easier PCB integration, and the NI-780H-2L package provides a screw-down flange for direct mounting to a heatsink or chassis ground plane, ensuring low thermal resistance under continuous-wave (CW) and pulsed RF drive. Architecturally, the MRF6S27050HR5 uses NXP's sixth-generation HV6 LDMOS process, which improves intermodulation distortion and power-added efficiency relative to earlier MRF6 generations. Its drain is rated for 68 V transient, providing ruggedness against output mismatch and antenna load variation — a key requirement for base-station PAs exposed to VSWR events from disconnected or faulty feeders. Typical applications include WCDMA/UMTS driver and final PA stages in the 2.5–2.7 GHz wireless bands, WiMAX and LTE small-cell power amplifiers, and other 2.62 GHz industrial RF amplifier designs. It is also used as a driver for higher-power final-stage LDMOS devices in Doherty and push-pull configurations. When designing with this device, ensure the source leads are properly grounded with multiple low-inductance vias and that the NI-780H flange is firmly bolted to the heatsink. Bias sequencing (Vgs before Vds) and proper drain-side harmonic termination are essential for both linearity and long-term reliability. This page synthesizes NXP datasheet specifications, distributor stock signals, and drop-in same-family and cross-family alternatives from the MRF6S series and competing RF LDMOS families — engineering context not consolidated in any single distributor listing.
MRF6S27050HSR3 - 7W 28V RF Power MOSFET 2.5-2.7GHz | NXP
NXP Semiconductors (formerly Freescale) MRF6S27050HSR3 is a 7 W average, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for the 2500-2700 MHz band. Housed in the NI-780S ceramic package (CASE 465-06, STYLE 1), the device is qualified for high-efficiency linear amplifier stages in cellular base-station and repeater transmitters operating in the 2.5-2.7 GHz sub-bands of WiMAX, LTE-TDD, and 3G W-CDMA. An RF power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete solid-state device that converts DC input power into RF output power with high gain and efficiency. Part of the broader transistor family (MOSFET -> field-effect transistor -> discrete semiconductor), RF power MOSFETs in the LDMOS (Laterally Diffused MOS) family are the dominant technology for sub-3 GHz high-power transmitters because they combine high breakdown voltage, simple gate bias, and excellent ruggedness into mismatched loads compared to bipolar or GaAs alternatives. Key electrical ratings include a 28 V typical drain supply, 7 W average output power, 16 dB power gain at 2.62 GHz, and operation across 2500-2700 MHz. The HS suffix indicates the high-efficiency S-band variant with optimized load networks that delivers LDMOS-class efficiency for W-CDMA single-carrier signals with high peak-to-average ratios. Built-in ESD protection and an integrated drain-to-source zener clamp simplify the host amplifier module BOM. Typical applications include 2.5-2.7 GHz WiMAX/LTE-TDD base-station power amplifiers, 3G W-CDMA S-band driver stages, repeater and small-cell transmitter final stages, and RF front-end line-replacement cards. The ceramic NI-780S flange provides low thermal resistance, enabling CW or pulsed operation up to the datasheet's rated P1dB envelope. When designing with this part, ensure the source leads are properly grounded through a low-inductance via fence so that the 28 V drain current does not exceed the thermal package limit. Match the gate-bias network with the recommended sequence for the MRF6S27050 family and decouple the drain feed with broadband chip capacitors placed within 1 mm of the package flange.
MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS
The Freescale Semiconductor (NXP) MRF6S27085HR3 is a 20 W average output RF power lateral N-channel enhancement-mode LDMOS field-effect transistor designed for 2600-2700 MHz single-carrier N-CDMA base-station applications, housed in the NI-780H-2L ceramic package (CASE 465-06, STYLE 1). The device operates from a nominal 28 V DC supply and delivers 15.5 dB typical power gain at 2.66 GHz with 900 mA quiescent bias current. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a type of power MOSFET optimized for high-frequency, high-power amplification. LDMOS parts sit within the broader taxonomy: RF power transistor -> discrete RF semiconductor -> power amplifier building block. They dominate cellular base-station power amplifier (PA) designs because of their high breakdown voltage, excellent thermal stability, and simplified single-supply biasing versus older bipolar RF transistors. Key features include 28 V drain operating voltage, 68 V drain-source breakdown rating, 900 mA typical bias current at 28 V test, and 15.5 dB gain in the 2.6-2.7 GHz band. Thermal resistance is characterized for the NI-780 ceramic flange-mount package, which is bolted directly to the amplifier heat-sink for lowest possible junction-to-case thermal impedance. The device is internally input/output matched for the 2.6 GHz band, reducing external matching complexity. The MRF6S27085HR3 uses a lateral DMOS cell with a thermally optimized ceramic package, enabling reliable 20 W CW or W-CDMA-class average power operation. The -HR3 tape-and-reel packaging suffix supports high-volume SMT-compatible flange-mount assembly when paired with automated pick-and-place fixtures, although the ceramic flange itself still requires bolt-down thermal mounting. Typical applications include W-CDMA/LTE 2.6 GHz micro-cell and macro-cell base-station PAs, WiMAX and WiBro 2.5-2.7 GHz amplifier stages, multi-carrier amplifier (MCPA) final stages, and WLL (Wireless Local Loop) Class AB or Class C driver amplifiers. The same die is also used in pulsed-RF industrial and aerospace links operating in the 2.5-2.7 GHz sub-band. Designers should ensure the NI-780 flange is bolted to a heat-sink with a thin layer of thermal compound, and that the input/output matching network is tuned for the exact sub-band (2.6 vs 2.7 GHz) to realize the rated 15.5 dB gain and >30% efficiency. The HSR3 same-die variant shares the NI-780 package but is offered as a different reel orientation/tape configuration for automated assembly.
MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP
The NXP (formerly Freescale) MRF6S27085HR5 is a 20W RF power LDMOS transistor designed for W-CDMA and multi-carrier base-station amplifier applications in the 2500-2700 MHz band, supplied in the NI-780H-2L ceramic-acorn package. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized MOSFET variant engineered to deliver high RF output power with high gain and efficiency at RF frequencies. LDMOS devices dominate cellular base-station power amplifiers because they offer a superior trade-off between peak power, gain, bandwidth, and cost compared to silicon bipolar or GaAs alternatives. Within the broader hierarchy, LDMOS sits as a sub-class of RF power MOSFET -> power transistor -> discrete semiconductor -> electronic component. Key specifications include a 28V supply operation, 900 mA quiescent test current, 15.5 dB small-signal gain at 2.66 GHz, 20W output power, and a 68V drain-source rated voltage. The device is internally matched for the 2600-2700 MHz band, which simplifies PCB layout and reduces external component count. The NI-780H-2L package provides a low thermal-resistance path that is critical for dissipating heat at continuous CW and multi-carrier operation. Architecturally, the MRF6S27085HR5 uses NXP's HV6 LDMOS process, which integrates ESD protection, an on-chip internal input-matching network, and a thermally optimized source-down flange. The 68V breakdown rating provides generous headroom over the 28V operating supply, enabling reliable operation under high VSWR load-mismatch conditions typical of base-station installations. Typical applications include W-CDMA/UMTS base-station power amplifiers at 2.5-2.7 GHz, multi-carrier GSM/EDGE amplifiers, WiMAX and WiBro amplifier blocks, and Class AB linear amplifier designs for cellular infrastructure. The part is also used in repeater and small-cell final-stage PA modules where high linearity is required. When designing with this part, ensure the drain bias is applied through a dedicated sequencing controller (Vgs must reach the threshold before Vds is applied) to prevent device damage from dv/dt transients. Provide a minimum of 1 oz copper on the host PCB directly under the ceramic flange for adequate heat extraction. This page synthesizes distributor pricing, drop-in alternatives from the NXP HV6 LDMOS family, and practical design notes not consolidated in the manufacturer datasheet, giving the design engineer a one-stop reference for sourcing and applying the MRF6S27085HR5.
MRF6S27085HSR5 - 20W 2.66GHz RF Power LDMOS | NXP
The NXP Semiconductors MRF6S27085HSR5 is a 20W RF power field-effect transistor (LDMOS) designed for CDMA base station applications in the 2600-2700 MHz band, packaged in the NI-780S ceramic power package. It operates from a 28V VDD supply with a quiescent current of 900 mA and delivers 20W average output power with 15.5 dB gain at 2.66 GHz. An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor FET optimized for high-power radio-frequency amplification. LDMOS technology is the dominant building block of modern wireless infrastructure base stations, occupying the role: RF power transistor -> discrete RF semiconductor -> power amplifier device -> wireless infrastructure component. Compared to bipolar and GaAs alternatives, LDMOS offers the best balance of power density, efficiency, cost, and ruggedness for sub-3 GHz cellular bands. Key features of the MRF6S27085HSR5 include 15.5 dB typical gain, 28V VDD operation, 68V drain-source voltage rating, 900 mA quiescent bias current, and Class AB/Class C compatibility for both WLL and multicarrier amplifier topologies. The device is also characterized for WiMAX and WiBro service profiles, giving designers a single part that covers several OFDM-based waveforms in the 2.6 GHz band. Architecturally, the MRF6S27085HSR5 uses NXP's HV6 LDMOS process, which provides high breakdown voltage for 28V operation and integrated ESD protection. The NI-780S ceramic package with flanged leads is optimized for direct bolt-down to a copper or aluminum heatsink, minimizing thermal resistance from junction to case and enabling CW and pulsed modes without external cooling in well-engineered thermal designs. Typical applications include 2.6 GHz CDMA/WCDMA base station power amplifiers, WiMAX and WiBro macro-cell transmitters, multicarrier amplifier modules for LTE band 38/41, and 2.7 GHz industrial/scientific RF links. Designers select this part when they need a proven, mature 28V LDMOS in a rugged flanged ceramic package for outdoor or remote radio head deployments. Design consideration: bias sequencing must gate the drain voltage with the gate bias to avoid destructive turn-on transients; follow NXP's HV6 family application note for the recommended sequencing and over-voltage protection circuitry. Thermal design must also account for Pdiss of roughly (VDD - V knee) * I, with adequate bolt-down torque on the flange to maintain the datasheet thermal resistance. This page synthesizes distributor pricing, drop-in alternatives, parametric comparisons, and practical RF amplifier design notes that are not consolidated in any single manufacturer datasheet, accelerating part selection and PCB-to-PCB thermal planning for 2.6 GHz infrastructure designers.
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
The NXP MRF6S9045NBR1 is an RF power field-effect transistor (N-Channel enhancement-mode lateral MOSFET) designed for broadband commercial and industrial applications up to 1000 MHz, delivering 10 W average output power at 880 MHz from a 28 V supply with 22.7 dB gain. Housed in the NI-880H-2L (TO-272-2) ceramic package, it is optimized for large-signal common-source amplifier blocks in 28 V base-station equipment, including single-carrier N-CDMA driver and final stages. The high gain and broadband performance make it equally useful for industrial RF heating, FM broadcast, and sub-1 GHz ISM links. An RF power MOSFET is a lateral DMOS device engineered to deliver high RF output power with high gain and efficiency at a specified frequency band, replacing older bipolar transistors in base-station power amplifiers. Its role in the system hierarchy is: RF power transistor → power amplifier (PA) → transceiver RF front-end → base-station subsystem. Lateral MOSFETs offer higher gain-bandwidth product, lower feedback capacitance, and easier broadband matching than bipolar parts, at the cost of higher on-resistance per unit area. Key features include a 68 V minimum drain-source breakdown voltage, 350 mA quiescent drain current, 22.7 dB typical power gain at 880 MHz, and 175 W absolute maximum power dissipation. The enhancement-mode gate structure simplifies bias circuits (no negative gate supply required) and the ceramic NI-880 package provides a low thermal resistance path from die to heatsink, essential for sustained CW and pulsed-CDMA operation. The device is internally input-matched for the 800-1000 MHz band, reducing external component count on the demo board. Typical applications include 880 MHz N-CDMA base-station final stages, 900 MHz GSM/EDGE driver amplifiers, industrial RF heating at 13.56/27/40 MHz (with retuning), and UHF TV/FM broadcast transmitters. When designing with this part, mount the flange directly to a flat copper or aluminum heatsink using thermal compound; any mounting torque variation directly impacts Rth and long-term reliability. Ensure the gate bias network is low-impedance at the operating frequency to prevent parametric oscillation, and always sequence the drain supply with the gate bias to avoid forward-biasing the gate oxide.
MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP
The NXP MRF6S9045NR1 is an RF power N-channel enhancement-mode lateral MOSFET (LDMOS) designed for 880 MHz single-carrier N-CDMA base station applications, delivering 10 W average output power at 28 V VDD with 22.7 dB gain and 350 mA quiescent bias. It is housed in a TO-270-2 overmolded plastic package rated for broadband operation up to 1000 MHz. A lateral MOSFET (LDMOS) is a specialized RF power transistor architecture that places the drain on the top surface of a thin epitaxial layer, enabling high breakdown voltage, high gain, and excellent thermal performance at RF frequencies. LDMOS sits in the broader hierarchy: power transistor -> RF power transistor -> LDMOS -> base-station PA building block. It dominates cellular base-station power amplifier final stages because of its high efficiency, broadband capability, and ability to survive severe VSWR mismatches. Key features include 22.7 dB typical power gain, single-carrier N-CDMA ACPR performance optimized for linearity, and high ruggedness - the device tolerates infinite VSWR at rated supply voltage. Drain efficiency at 10 W Pout reaches approximately 33 percent at 880 MHz, and the device operates from a single 28 V rail typical of macro-cell base-station infrastructure. The TO-270-2 case provides low thermal resistance for reliable CW and pulsed operation. Designed by Freescale Semiconductor (now NXP), the part traces to a well-documented RF LDMOS process node optimized for cellular infrastructure PA designers. The "N" suffix indicates transition to lead-free terminations, and the device is drop-in compatible with the earlier non-N suffix variant (MRF6S9045R1), enabling RoHS-conversion board retrofits without PCB layout changes. Typical applications include 880 MHz cellular base-station power amplifiers (single-carrier N-CDMA, GSM EDGE, multi-carrier), RFID and industrial scientific RF power stages, public-safety UHF band linear amplifiers, and broadband general-purpose RF amplification up to 1000 MHz. When designing with the MRF6S9045NR1, ensure the 50 ohm input and output matching networks present the datasheet-recommended load impedances at the fundamental and second harmonic to achieve the rated gain and efficiency. Proper bias sequencing (gate voltage applied before drain voltage) is mandatory to avoid device damage. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
MRF6S9125NBR1 - 880MHz 27W RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF6S9125NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) RF power transistor rated for 27 W average output power at 28 V, delivering 20.2 dB gain at 880 MHz in the 865-960 MHz band, packaged in a TO-272 WB-4 ceramic/bolt-down flanged housing. An RF Power LDMOS (Laterally-Diffused Metal-Oxide-Semiconductor) is a specialized power MOSFET whose drift region is diffused laterally under the gate. This architecture is the dominant technology in modern base-station RF power amplifiers because it combines high RF output power, high drain efficiency, high ruggedness under VSWR mismatch, and excellent thermal conductivity when mounted directly to a copper heatsink. LDMOS devices sit within the broader hierarchy: RF power transistor -> discrete semiconductor -> power amplifier building block -> base-station RF front-end. Key features of the MRF6S9125NBR1 include 28 V typical drain operation with a 68 V maximum drain-source rating, 950 mA quiescent/test current at the published test condition, 20.2 dB power gain, and broadband performance up to 1000 MHz. The device is designed for single-N-CDMA, GSM, GSM EDGE, and multicarrier amplifier applications, with high gain and broadband capability eliminating the need for narrow-band matching networks. The part is fabricated using NXP's high-voltage LDMOS process with a lateral channel and an integrated source-connected field plate. The TO-272 WB-4 ceramic package provides a low-thermal-resistance path from die to heatsink, with the bolt-down flange enabling direct mounting to a spreader or cold plate. The "NB" suffix indicates tape-and-reel packaging for high-volume assembly. Typical applications include 880 MHz cellular base-station power amplifiers, GSM/EDGE repeaters, multicarrier driver stages, and industrial RF heating/generator amplifiers operating in the 865-960 MHz ISM/RFID band. Designers should note the device was succeeded by the MRFE6S9125NR1/NBR1 family per NXP PCN12895, with the "E" denoting an enhanced/replacement die generation.
MRF6S9130HR5 - 27W 880MHz LDMOS RF Power Transistor | NXP
The NXP MRF6S9130HR5 is a 27 W N-channel enhancement-mode lateral MOSFET (LDMOS) designed for cellular base station RF power amplifier applications in the 865 to 960 MHz band. Built around a 28 V supply rail and packaged in the NI-780H-2L ceramic flange-mount case, it delivers 19.2 dB typical power gain at 880 MHz with a 950 mA quiescent bias, supporting N-CDMA, GSM, GSM EDGE, and multi-carrier amplifier (MCA) topologies with class AB efficiency. An RF power transistor is a specialized semiconductor that converts DC supply current into a controlled, high-frequency output signal at the antenna feed of a wireless transmitter. Within the cellular base-station hierarchy, this category sits below RF power amplifiers and above general-purpose LDMOS FETs; it inherits noise, gain, and ruggedness figures from RF ICs while occupying the higher-power edge of the macro-cell transmitter chain. LDMOS in particular dominates the sub-3 GHz macro base-station segment because of its high breakdown voltage, good thermal conductivity, and lower cost per watt than GaAs or GaN at sub-1 GHz frequencies. Key electrical specs include 28 V typical operation (a 68 V-rated breakdown part), 19.2 dB power gain at 880 MHz, 27 W CW output power, and operation across 865-960 MHz. The N-channel enhancement-mode structure simplifies gate-bias generation; a standard 0 to +5 V gate-source bias is sufficient, eliminating negative-voltage rails. The ceramic NI-780H-2L flange package screws directly to the heatsink, providing the low thermal resistance required for continuous CW operation at 27 W. Architecturally, the lateral MOSFET cell geometry provides high breakdown ruggedness and inherently good linearity, making the part well-suited to N-CDMA and GSM EDGE modulation formats that have tight adjacent-channel leakage (ACLR) and error-vector-magnitude (EVM) masks. The lateral drain structure also exhibits high VSWR tolerance, surviving 10:1 output mismatch at full rated power - critical for production-line test cells where antenna loads can be unpredictable. Typical applications include 900 MHz GSM/EDGE base-station PA final stages, N-CDMA macro-cell driver and final amplifiers, and multi-carrier amplifier (MCA) modules feeding sector antennas. Its 27 W output supports 2-4 channel macro-cell sectors at moderate-power cell-site configurations. Designers should bolt the NI-780H-2L flange directly to a copper or aluminum heatsink with a thin layer of thermal compound; forced-air cooling is recommended above 20 W dissipation. Bias sequencing should apply gate voltage before (or simultaneously with) drain voltage to avoid parametric shifts. Input/output matching networks must target 50 ohms at 880-915 MHz with second-harmonic trapping required for spectral-mask compliance. This page synthesizes distributor stock, parametric substitution candidates, and engineering design context into one concise reference - a layer of practical guidance the bare NXP datasheet does not provide.
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6S9130HSR3 is a 27 W average, 28 V lateral N-channel RF power MOSFET designed for single N-CDMA base station amplification at 880 MHz, housed in the NI-780S ceramic package (CASE 465-06, Style 1). The part delivers 19.2 dB typical gain and is characterized for 950 mA quiescent operation from a 28 V DC supply rail, making it suitable for driver and final stages in sub-1 GHz cellular infrastructure. A radio-frequency power MOSFET (LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power operation in the 100 MHz to 30 GHz range. LDMOS devices dominate cellular base-station power amplifier (PA) designs because they combine high RF power density, reasonable gain, and straightforward 28 V or 50 V drain biasing. The MRF6S9130HSR3 sits within the LDMOS -> RF power transistor -> discrete semiconductor -> power management hierarchy. Key differentiating features include 19.2 dB typical power gain at 880 MHz, 27 W average output power for N-CDMA single-carrier waveforms, and the NI-780S hermetic ceramic flange package that provides a low thermal resistance path from die to heatsink. The HSR3 suffix denotes a tape-and-reel shipping form factor rather than the HR3 bolt-down flange variant. The part was originally released by Freescale Semiconductor and migrated to NXP after the 2015 acquisition; PCN12895 covers MRF6S9160-series migration to the MRFE6S9160 family. Typical applications include 880 MHz N-CDMA cellular base-station PAs, GSM and GSM EDGE driver/final stages in multicarrier amplifiers, and other sub-1 GHz industrial RF power blocks. The 28 V bias and high gain reduce the number of driver stages required, simplifying PA lineups. When designing with this part, ensure adequate drain bias decoupling with low-ESR ceramic capacitors placed within 5 mm of the lead, and provide a substantial copper or aluminum heatsink rated for the calculated Pdiss (for 27 W Pout at roughly 50% efficiency, internal dissipation approaches 27 W).
MRF6S9130HSR5 - 27W 880MHz RF Power LDMOS | NXP
The NXP MRF6S9130HSR5 is a 27 W RF power LDMOS field-effect transistor designed for high-performance wireless base station amplifiers operating at 880 MHz. Housed in the NI-780S ceramic package, it delivers 19.2 dB power gain at 28 V test conditions with 950 mA quiescent current, optimized for N-CDMA, GSM and GSM EDGE base-station transmitter line-ups where linearity and ruggedness are critical. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET fabricated with a lateral drift region that supports high breakdown voltage while maintaining excellent RF gain and efficiency. RF power LDMOS sits within the broader category of discrete semiconductors > RF FETs > RF power transistors, and is the dominant device technology for sub-6 GHz cellular base-station final-stage PA design because of its high power density, broadband gain, and proven reliability in 28 V to 50 V class-AB operation. Key features include 19.2 dB typical gain at 880 MHz, 27 W CW output power capability at 28 V Vdd, high ruggedness for VSWR mismatch tolerance, and built-in ESD protection. The NI-780S ceramic-flanged package provides low thermal resistance and is compatible with standard RF PCB and heatsink assembly practices used in macro-cell base stations. The device supports both pulsed and continuous-wave operation modes per the Freescale/NXP datasheet family. The MRF6S9130HSR5 uses NXP's 6th-generation high-voltage LDMOS process technology, which integrates a controlled drain extension, optimized source grounding, and a thermally robust die layout. This architecture delivers consistent RF performance across the 800-900 MHz cellular band while maintaining the high breakdown voltage needed for 28 V rail operation and excellent intermodulation distortion performance. Typical applications include 880 MHz cellular base-station final-stage PAs, GSM/EDGE linear power amplifiers, N-CDMA driver and output stages, and industrial RF heating amplifiers. Per the NXP datasheet, this part was specifically characterized for cellular infrastructure equipment operating in the 869-894 MHz US cellular and 925-960 MHz GSM-900 bands. Design consideration: maintain the device within its published SOA under all mismatch conditions - VSWR of 10:1 at all phase angles is the typical ruggedness benchmark. The NI-780S package requires proper torque and thermal compound when bolted to the heatsink, and the RF input/output matching networks must be tuned for the specific 880 MHz band of operation. This page synthesizes distributor pricing, parameter verification against the manufacturer datasheet, and application context not consolidated elsewhere for this obsolete but still-sought-after NXP/Freescale RF power transistor.
MRF6S9160HR3 - 880MHz 35W RF Power MOSFET | NXP/Freescale
The NXP/Freescale MRF6S9160HR3 is an 880 MHz, 35 W average, 28 V lateral N-channel RF power MOSFET designed for single N-CDMA base-station final-stage amplification. Housed in the NI-780H-2L (CASE 465-06, STYLE 1) ceramic/air-cavity package, it delivers 20.9 dB gain at 880 MHz from a 28 V supply while drawing approximately 1.2 A of quiescent bias current. An RF power MOSFET is a high-frequency, high-power transistor optimized for switching or amplifying RF energy in the VHF/UHF/microwave spectrum, typically built on a lateral silicon process with a thick metalized source for low parasitic inductance. Within the broader component taxonomy, an RF power MOSFET sits below general-purpose power MOSFETs and above small-signal RF FETs, serving as the active gain element in the final stage of a cellular base-station power amplifier chain. Key features of the MRF6S9160HR3 include 880 MHz CW/Pulsed operation, 35 W average output power, 20.9 dB typical power gain, single N-CDMA-driven linearity, and a ceramic NI-780H package with flanged leads for screw-down PCB mounting. The lateral N-channel enhancement-mode architecture is intrinsically rugged under high VSWR and provides stable class-AB operation when biased at approximately 1.2 A DC. From an architecture standpoint, the device is part of NXP's MRF6S series, a family of 28 V lateral RF MOSFETs covering 700-2700 MHz cellular bands. The 880 MHz tuning, 28 V rail, and integrated ESD structure make the part particularly well suited for macro-cell base-station PA line-replacement designs requiring high gain and broadband stability without external matching network rework. Typical applications include GSM/EDGE/CDMA2000 macro base-station final-stage PAs, repeater and tower-mounted amplifier (TMA) drivers, 900 MHz industrial/scientific RF generators, and high-power ISM-band transmitters. Designers typically match the device with a 50 Ω microstrip input/output network and a 1.2 A quiescent bias supply. A practical design consideration: the MRF6S9160HR3 requires a flange-mount heatsink and adequate forced-air cooling at full 35 W output. The lateral N-channel structure is tolerant of brief load-mismatch events, but sustained high reflected power will trigger thermal shutdown of the underlying silicon die. This page synthesizes distributor availability, NXP datasheet electrical parameters, drop-in compatible variants in the MRF6S series, and practical base-station PA design notes not consolidated on the manufacturer's product page.
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
The NXP MRF6S9160HSR3 is a 35 W average, 28 V single-N-CDMA lateral N-channel RF power MOSFET designed for 865-960 MHz cellular base-station applications. Housed in the NI-780S ceramic/Flange package, it delivers 20.9 dB power gain at 880 MHz with 1.2 A quiescent bias and supports both N-CDMA, GSM, and GSM EDGE waveforms including multicarrier amplifier topologies. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power MOSFET optimized for high-frequency, high-power RF amplification. Within the broader semiconductor hierarchy, RF LDMOS devices sit at the intersection of discrete power transistors and RF/microwave components, designed specifically for the final-stage PA (power amplifier) in wireless infrastructure. They typically combine high breakdown voltage, excellent thermal performance, and broadband gain for Doherty, push-pull, and single-ended PA architectures used in 4G LTE and legacy 2G/3G networks. Key features of the MRF6S9160HSR3 include 21 dB typical power gain at 880 MHz, 31% drain efficiency, and -46.8 dBc ACPR at 750 kHz offset in N-CDMA. It is rated for 28 V VDD operation with a 68 V drain-source voltage rating, providing substantial headroom for VSWR mismatch. The part is internally matched for simplified board integration and includes integrated ESD protection. The device uses NXP's high-voltage LDMOS process technology with a lateral structure that minimizes parasitic capacitance, enabling broadband performance from 865 MHz through 960 MHz. Its NI-780S flange-mount package provides a low thermal resistance path to the system heatsink, essential for dissipating the 100+ W peak power in continuous CDMA service. Typical applications include cellular base-station final-stage PAs, GSM/EDGE multicarrier amplifiers, and N-CDMA driver stages. It is widely used in 900 MHz repeaters, microcells, and macrocell base stations where linearity and efficiency are both critical design parameters. Design consideration: Always use sufficient external matching networks to present the correct load impedance at the fundamental and harmonic frequencies. The datasheet-recommended application circuit should be followed closely, as LDMOS devices are sensitive to load-pull characteristics beyond the matched operating point. This page synthesizes distributor pricing, drop-in same-package and migration alternatives, and practical design notes not found in the manufacturer datasheet alone, including guidance on the MRFE6S9160HSR3 device-migration path per PCN12895.
MRF6V13250HR5 - 250W RF Power LDMOS, 1300MHz, NI-780 | NXP
The NXP (formerly Freescale) MRF6V13250HR5 is a 250 W RF power transistor built on laterally-diffused metal-oxide-semiconductor (LDMOS) technology, designed for very-high-frequency (VHF) and ultra-high-frequency (UHF) continuous-wave and pulsed applications from 960 MHz to 1500 MHz. It delivers 22.7 dB typical gain at 1300 MHz when tested at 50 V and 100 mA quiescent current, packaged in the NI-780H-2L ceramic-flanged form factor. The device is rated to 120 V drain-to-source and is intended for high-power CW and pulsed RF amplification. A radio-frequency power transistor (RF LDMOS) is a specialized discrete semiconductor optimized to amplify high-frequency signals with high efficiency and ruggedness, typically used as the final stage in a transmitter chain. RF transistors sit within the broader hierarchy of discrete semiconductors -> transistors -> RF transistors -> RF power MOSFETs. The LDMOS architecture combines a lateral current flow with a vertical double-diffused structure, providing high breakdown voltage, low feedback capacitance, and excellent thermal conductivity through the ceramic flange. Key specifications include 250 W CW output power capability, 22.7 dB gain at 1300 MHz, and operation from 50 V supply. The NI-780H-2L ceramic-metal flange package provides a low thermal resistance from junction to the heatsink surface, enabling sustained high-power operation with appropriate cooling. The 120 V drain-source voltage rating provides ample headroom for pulsed avionics and radar waveforms. Architecturally, the MRF6V13250HR5 uses a single N-channel LDMOS die designed to be stable into a 50 ohm load with broadband matching networks. The high gain reduces the number of driver stages needed in a transmitter chain, while the LDMOS process offers intrinsic thermal stability and tolerance to load mismatch. Internal input and output matching structures simplify board-level integration in Class AB amplifiers. Typical applications include 1300 MHz avionics transponders, Distance Measuring Equipment (DME), Tactical Air Navigation (TACAN), secondary surveillance radar, and industrial RF heating systems. The wide 960-1500 MHz coverage suits both aerospace navigation bands and industrial/scientific telemetry links. Designers should mount the device on a copper or brass heatsink with proper thermal interface material, and add a snubber network to protect against load mismatch. The 50 V supply rail should be well-decoupled to minimize RF feedback through the DC path. This page synthesizes distributor pricing, drop-in-compatible NXP and cross-brand alternatives, and practical thermal/PCB design notes not collated on any single manufacturer page.
MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP
The NXP MRF6V14300HR5 is a N-Channel enhancement-mode lateral RF power MOSFET rated for 50 V drain operation and 330 W pulsed output power at 1.4 GHz, supplied in a NI-780H-2L ceramic-flange push-pull package. It targets the L-band (1200-1400 MHz) pulsed avionic, radar, and industrial-sensing transmitter market where high peak power, high gain (18 dB) and ruggedness are required. A lateral N-channel RF MOSFET (LDMOS-family device) is a planar power transistor whose drain current flows through a laterally arranged channel under the gate. Compared with vertical bipolar RF transistors, LDMOS parts combine simpler gate drive (no negative bias needed for class-AB biasing), higher gain, and inherent broadband stability, making them the default choice for solid-state RF power stages from HF through S-band. The MRF6V14300HR5 is characterized for pulsed operation at 1 to 12 percent duty cycle. The 50 V drain rating delivers 330 W of peak output power while the 18 dB typical gain reduces driver-stage complexity in IFF, DME, TACAN, and secondary-surveillance radar links. The lateral N-channel design yields a 150 mA typical quiescent drain bias range and the push-pull NI-780H-2L ceramic package provides a low-thermal-resistance path to the system heatsink. Engineers typically deploy this part in the final or penultimate stage of an L-band pulsed amplifier chain, preceded by a smaller driver such as the MRF6V10010NR4. A 50 V switched-mode supply, a bias-T network with 5 V gate bias, and a 1:1 or 1:2 microstrip transformer to 50 ohm complete the surrounding circuit. Good RF grounding, ample decoupling, and matched input/output networks are essential for stable 18 dB gain. Application priorities include IFF transponders, DME interrogators, TACAN ground stations, weather radar front-ends, and other 1.2-1.4 GHz pulsed RF links. Compared with bipolar alternatives the LDMOS gain advantage reduces driver-stage count; compared with GaN-on-SiC parts the cost-per-watt is markedly lower at the 300 W power level, although GaN still wins on efficiency at narrower bandwidths. Choose the MRF6V14300HR5 over the MRF6V14300HR3 only when you need the higher gain tape-and-reel HR5 sub-line for surface-mount-friendly handling, and over the MRF6V14300HSR5 only if your chassis cannot dissipate the slightly higher thermal load of the straight-lead package. For new designs above 1.4 GHz or where efficiency must exceed 55 percent, consider NXP's MRF6V2150 GaN-on-SiC family instead. This page synthesizes distributor stock, parametric comparisons, and practical L-band PA design notes not collated in the manufacturer datasheet alone.
MRF6V14300HS - 330W 1.4GHz RF Power MOSFET NI-780S | NXP
The NXP Semiconductors (formerly Freescale) MRF6V14300HS is a pulsed lateral N-Channel enhancement-mode RF power MOSFET designed for high-power operation in the 1200 MHz to 1400 MHz band, rated at 330 W output power with a 50 V supply and housed in the NI-780S ceramic package. Key headline parameters are 1400 MHz operating frequency, 330 W pulsed output power, and 50 V drain bias, packaged in the NI-780S ceramic flange-mount case. The device delivers 18 dB typical power gain and is specified for pulsed service from 1% to 12% duty cycle, making it suitable for L-band radar and avionics transmitters. An RF power MOSFET is a lateral metal-oxide-semiconductor field-effect transistor optimized for radio-frequency power amplification rather than low-frequency switching. Within the taxonomy it belongs to: RF power transistor -> discrete RF semiconductor -> power management discrete -> semiconductor device. Lateral construction gives lower feedback capacitance and higher breakdown ruggedness than vertical DMOS parts, enabling safe operation into high VSWR loads typical of pulsed radar service. Key features of the MRF6V14300HS include 18 dB minimum power gain at 1400 MHz, 50 V typical drain bias, integrated gate-source ESD protection, gold metallization for hermetic reliability, and a beO-free package construction. The part is internally matched for broadband performance in the 1200 to 1400 MHz L-band segment and includes built-in protection against high VSWR conditions. Architecturally, the MRF6V14300HS uses NXP's HV6 lateral MOSFET process, a high-voltage enhancement-mode LDMOS-derivative technology tuned for RF power. The ceramic NI-780S flange package provides low thermal resistance and beO-free construction, supporting long-term reliability in pulsed avionic and military environments where beO is restricted for health and safety reasons. Typical applications include L-band avionics transponders, DME (Distance Measuring Equipment), TACAN, primary surveillance radar, IFF (Identification Friend or Foe) transmitters, and pulsed RF power amplifiers for the 1030/1090 MHz secondary surveillance band when paired with appropriate matching networks. The beO-free package is particularly valued in aerospace and defense programs. When designing with this part, ensure adequate DC blocking and RF bypassing on the gate and drain bias lines. The duty cycle must remain within the 1% to 12% specification envelope to avoid exceeding the pulsed thermal safe operating area. Source grounding via the package flange is critical for low common-lead inductance.
MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP
The NXP MRF6V14300HSR5 is a 330 W pulse-rated lateral N-channel RF power MOSFET (LDMOS) designed for operation from 1200 MHz to 1400 MHz in a 50 V supply rail, housed in the NI-780S ceramic package. It delivers 18 dB typical gain at 1400 MHz with 50 V drain bias and 150 mA quiescent current, making it a drop-in reference design transistor for pulsed L-band radar systems. A power RF MOSFET is a specialized lateral double-diffused metal-oxide-semiconductor transistor built on a silicon substrate and engineered for high-frequency, high-power signal amplification. Within the broader taxonomy it sits under RF power transistor -> RF MOSFET -> discrete RF semiconductor -> power management device. LDMOS technology dominates sub-GHz to roughly 3 GHz pulsed applications because of its high breakdown voltage, simple gate biasing and excellent ruggedness into severe output mismatch, and the MRF6V14300HSR5 belongs to NXP's VHV6 (Very High Voltage, 6th generation) family optimized for pulsed avionics and radar duty. Key features include a 50 V drain-source operating voltage with a 100 V breakdown rating, 330 W peak output power at 1.4 GHz, 18 dB typical power gain, pulsed duty cycle support from 1% to 12%, and integrated ESD protection. The NI-780S package provides low thermal resistance and is compatible with NXP's broader 50 V LDMOS pulsed lineup, simplifying PCB reuse. The device is specified for 1.4 GHz pulsed operation, aligning it with long-range primary surveillance, air-traffic-control and weather-radar transmitter chains. The architecture is a laterally diffused N-channel MOSFET on a high-resistivity silicon substrate, with an integrated gate-source ESD diode. Source vias are connected through the package backside for low-inductance grounding, while the gate is DC-biased through a bias-tee network. The 50 V rail provides headroom for high-power pulses while keeping average dissipation manageable for pulsed service. Typical applications include L-band pulsed radar transmitters (1200-1400 MHz), secondary surveillance radar transponders, air-traffic-control and weather-radar final stages, avionics DME/TACAN power amplifiers, and pulsed RF signal generators. Its 18 dB gain at 1.4 GHz makes it well suited as a final or driver stage where high gain reduces chain complexity. A key design consideration is thermal management at peak power. At 330 W peak with a typical 10% duty cycle the average dissipation is much lower than continuous rating, but the design must still provide adequate heatsinking, good PCB thermal vias, and bias sequencing to avoid in-rush current. Use a 50 V nominal supply and ensure gate bias is applied before drain voltage to prevent uncontrolled current spikes. This page synthesizes NXP datasheet parameters, distributor stock, application-stage pairing recommendations, and design notes not found in the original datasheet, giving the design engineer a practical reference alongside the manufacturer's specifications.
MRF6V2150NBR5 - 150W 50V RF MOSFET TO-272 | NXP
The NXP MRF6V2150NBR5 is a 150 W, 50 V N-Channel Enhancement-Mode Lateral RF power MOSFET designed for continuous-wave (CW) large-signal output and driver stages with operating frequencies up to 450 MHz, packaged in the TO-272 WB-4 ceramic/bolt-down format with a 5-pin TO-272W tape-and-reel configuration. The device provides 25 dB power gain, 150 W typical CW output power, and operates from a 50 V drain supply, with a 110 V drain-to-source breakdown voltage headroom that supports inductive load mismatches typical in HF/VHF power amplifier output networks. An RF power MOSFET (radio-frequency power metal-oxide-semiconductor field-effect transistor) is a discrete semiconductor device built specifically to amplify high-frequency alternating signals at significant power levels. Within the broader taxonomy, RF power MOSFETs sit under power transistors, then power semiconductors, then discrete semiconductors. They use a lateral die layout (current flows horizontally through the silicon) rather than the vertical structure of low-frequency power MOSFETs - this trade-off reduces die capacitance and enables multi-hundred-MHz operation at the cost of higher on-resistance per unit area. Lateral MOSFETs also exhibit a negative temperature coefficient of drain current, which provides automatic current sharing when multiple devices are paralleled for higher output power. The MRF6V2150NBR5 features a 110 V VDS rating, an unmatched input/output impedance (allowing the designer full flexibility in the matching network), and an operating frequency envelope of 10-450 MHz that covers the industrial-scientific-medical (ISM) bands, FM broadcast, VHF land-mobile radio, and amateur radio segments from 6 m through 80 m. The device is characterized for CW service, which means its thermal and electrical ratings assume steady-state operation rather than pulsed radar-like duty cycles. Typical applications include CW drivers for 87.5-108 MHz FM broadcast transmitters, VHF land-mobile base-station power amplifiers in the 136-174 MHz band, 27 MHz CB/industrial radio final stages, and broadband laboratory amplifiers driving inductive or resistive test loads. Designers pair this part with lumped-element or microstrip matching networks and a heavy copper or forced-air heatsink because the TO-272WB-4 ceramic package is designed to be bolted directly to a chassis heatsink for low thermal resistance. When designing with this MOSFET, the most critical parameter is dissipated heat at the case. Estimated: at POUT = 150 W CW with 25 dB gain and 60% drain efficiency, the device dissipates roughly 100 W as heat, requiring a substantial heatsink with case temperature held below the 200 C maximum rating. Always mount with proper torque and thermal compound per the datasheet mechanical drawing. This page synthesizes distributor availability, drop-in alternatives from the same NXP MRF6V family, and practical CW amplifier design notes that go beyond the manufacturer datasheet's typical characteristics table.
MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP
The NXP MRF6V2300NR1 is a 300 W, 50 V lateral N-channel enhancement-mode RF power MOSFET designed for continuous-wave large-signal output and driver stages operating from 10 MHz to 600 MHz, housed in a TO-270 WB-4 ceramic flanged package. It targets industrial, medical, and scientific ISM/VHF/UHF applications where broadband unmatched operation is required. An RF power MOSFET (RF power field-effect transistor) is a discrete semiconductor device engineered to amplify radio-frequency signals at high efficiency and power levels. It belongs to the broader hierarchy: RF power transistor -> power MOSFET -> MOSFET -> FET -> discrete semiconductor. Compared with bipolar RF power transistors, lateral MOSFETs offer higher gain, simpler biasing, and superior thermal stability. The MRF6V2300NR1 belongs specifically to NXP's MRF6V family of 50 V broadband RF LDMOS parts. Key features include 300 W CW output power at 220 MHz with 25.5 dB power gain into a 50 V supply, broadband 10 MHz to 600 MHz matched operation, and a 110 V drain-source breakdown rating for transient headroom. The TO-270 WB-4 ceramic body provides low thermal resistance and high RF isolation, enabling small-footprint amplifier pallets and matched PCB modules. The device is built on a 50 V lateral MOSFET process with a high-resistivity silicon substrate, minimizing parasitic capacitance. At 220 MHz in Class AB, the device demonstrates 25.5 dB gain at 300 W CW into a 50 V rail. Unmatched input and output ports allow designers to optimize their own broadband matching networks for industrial heating, plasma generation, MRI exciter, particle accelerator, and broadcast FM/TV service classes. Typical applications include UHF/VHF CW industrial heating, RF plasma generators for semiconductor etch and medical ablation, FM/VHF broadcast amplifiers, MRI/NMR transmit amplifiers, and particle accelerator driver stages. The unmatched broadband performance simplifies wideband amplifier design across 10-600 MHz with a single part. When designing with this device, ensure the drain bias network uses adequate RF choking and the load VSWR stays within the safe operating area (SOA). The unmatched input/output ports require designer-optimized matching networks; proper thermal management via the TO-270 flange is mandatory at full 300 W CW power. This page synthesizes manufacturer datasheet values, distributor pricing, parametric comparisons with NXP same-family drop-ins, and practical thermal/SOA design notes not available on a single competitor product page.
MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP
The NXP MRF6V2300NR5 is a 300 W lateral N-channel single-ended broadband RF power MOSFET designed for CW large-signal output and driver stages in the 10 MHz to 600 MHz band. Housed in the TO-270 WB-4 ceramic-air-cavity package, it delivers 25.5 dB typical gain at 220 MHz when operated at 50 V and supports industrial, medical, and scientific RF power applications. What is an RF Power MOSFET? An RF power MOSFET is a specialized lateral double-diffused MOS transistor engineered to deliver high RF output power with high gain and efficiency at high frequencies. RF power MOSFETs (a sub-family of power MOSFETs -> power transistors -> discrete semiconductors) use a lateral structure rather than the vertical structure of low-frequency power MOSFETs, reducing parasitic capacitance and enabling VHF/UHF operation. The MRF6V2300NR5 belongs to NXP's MRF6V family of 50 V broadband LDMOS RF power devices. Key features of the MRF6V2300NR5 include 300 W CW output power, a 50 V drain supply rating, broadband operation from 10 MHz to 600 MHz, and 25.5 dB typical gain at 220 MHz. The part is housed in the TO-270 WB-4 ceramic package with bolt-down flanges for direct heatsink mounting, providing low thermal resistance for CW dissipation. It is an unmatched device, leaving input and output matching to the system designer for tuning across sub-bands. Technically, the device uses NXP's high-voltage LDMOS process with a lateral N-channel enhancement-mode structure. The TO-270 ceramic-air-cavity package provides hermetic sealing and low parasitic inductance, supporting broadband performance. Operating at 50 V VDD rather than 28 V allows higher RF output power with the same device periphery, but requires careful bias sequencing and tuned output combiners. Typical applications include VHF/UHF broadcast transmitters, industrial RF heating and plasma generators, MRI RF power amplifiers, scientific particle accelerators, and radar driver stages. The wide frequency range makes one SKU reusable across multiple sub-bands simply by retuning the matching networks. A primary design consideration is thermal management: at 300 W RF output with ~55% efficiency, the device dissipates roughly 245 W as heat. Mounting on a heatsink with low thermal resistance (and proper forced-air cooling for CW service) is essential. Unmatched input/output networks must be designed carefully, as the part is not internally matched. This page synthesizes distributor pricing, same-family NXP alternates, and practical RF design notes that complement but do not duplicate the manufacturer datasheet.
MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP
The NXP (formerly Freescale) MRF6V3090NBR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor designed for 90 W CW output power at 860 MHz from a 50 V supply, housed in a TO-272 WB-4 ceramic package. It is engineered for broadcast and commercial aerospace broadband applications covering 470 to 1215 MHz, and is characterized to handle 10:1 VSWR at all phase angles when delivering 90 W CW into a 50 V DC rail. An RF power LDMOS is a laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power amplification in the UHF band. LDMOS technology sits within the broader power MOSFET family alongside VDMOS and GaN HEMT, and is widely used as the final stage in broadcast transmitters, industrial heating sources, and aerospace RF links because it offers high gain, good efficiency, and proven long-term reliability in Class AB operation. The MRF6V3090NBR1 specifically targets the 470-860 MHz portion of UHF (with extended characterization to 1215 MHz for avionics links) where solid-state replacement of older tube amplifiers is standard practice. Key features include 90 W CW typical output power at 860 MHz, a power gain of 22 dB at 860 MHz / 90 W, 50 V DC drain supply, integrated ESD protection, and characterized input/output series-equivalent large-signal impedance for class-AB broadband matching. The lateral MOSFET die is bonded into a high-thermal-conductivity ceramic carrier that provides low thermal resistance to the system heatsink, supporting continuous-wave operation in commercial broadcast service. Architecturally, the device uses an enhancement-mode N-channel lateral MOSFET die where the source is tied to the package flange through the mounting surface. This construction provides the ruggedness needed for broadcast service where high VSWR is common during antenna icing or tuning transients, and the wider gate breakdown margin typical of LDMOS technology improves reliability relative to bipolar RF transistors of the same power class. Typical applications include UHF broadcast transmitters in the 470-860 MHz TV band, commercial aerospace communications links operating near 1 GHz, industrial RF heating at UHF, and avionics transponders up to 1215 MHz. In broadcast service the part is usually driven by lower-power MRF8x LDMOS stages that together form a multi-hundred-watt amplifier chain. When designing with this device, ensure the heatsink surface has a flatness of better than 0.001 inch and a thermal compound bond, because the ceramic package relies on direct chassis mounting to achieve its rated junction-to-case thermal resistance. Always design the output matching network against the published series-equivalent large-signal impedance data rather than small-signal S-parameters for the most accurate CW performance prediction. This page synthesizes NXP datasheet specifications, current distributor availability, drop-in alternatives within the same TO-272 WB-4 footprint, and broadcast-band design notes in a single reference, sourced from the manufacturer datasheet (MRF6V3090N) and live distributor listings.
MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP
The NXP MRF6V3090NR1 is a 90 W CW RF power N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial broadcast applications across 470 to 1215 MHz, housed in the TO-270 WB-4 (TO-272-4 family) ceramic-air-cavity package. Per the NXP datasheet MRF6V3090N, the device is characterized for 50 V operation, delivers 22 dB typical gain at 860 MHz, and is rated for 90 W continuous-wave output power with 10:1 VSWR survivability across all phase angles. The MRF6V3090NR1 shares the same silicon and reference circuit family as MRF6V3090NR5 (tape-and-reel variant) and MRF6V3090NBR1 (narrower band tuning). An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized high-power MOSFET optimized for RF amplification in the UHF band. Within the hierarchy LDMOS -> RF power MOSFET -> RF power transistor -> discrete semiconductor, LDMOS devices dominate broadcast, radar, and industrial-scientific-medical (ISM) RF power stages because they offer high gain, good efficiency, and ruggedness compared to older bipolar RF transistors. The MRF6V3090NR1's enhancement-mode gate structure simplifies biasing (no negative gate voltage needed to prevent conduction) while the lateral drain arrangement minimizes parasitic capacitance, enabling broadband operation. Key features include 50 V drain-source breakdown, 90 W CW output at 860 MHz, 22 dB small-signal gain, integrated ESD protection, and gold metallization for high-temperature reliability. The ceramic TO-270 WB-4 air-cavity package provides very low lead inductance and excellent thermal transfer for high-duty-cycle broadcast service. Architecturally, the MRF6V3090NR1 uses NXP's latest-generation LDMOS process, which places the drain contact laterally along the source to reduce hot-carrier injection and increase ruggedness under VSWR mismatch. The NXP datasheet MRF6V3090N provides series-equivalent large-signal impedance parameters for 470, 860, and 1215 MHz operation, enabling engineers to design the matching network around the device rather than reverse-engineering it on the bench. Typical applications include UHF TV transmitter drivers, DVB-T/DVB-T2 broadband linear amplifiers, public-safety mobile-radio base stations, and ISM-band industrial heating. Its 10:1 VSWR tolerance makes it particularly suited to field installations where antenna mismatches are common. When designing with this device, follow the reference circuit in the datasheet for impedance matching and bias sequencing. The TO-270 WB-4 package requires a bolted heatsink with proper torque, and the gate voltage must be sequenced before the drain voltage for safe hot-switching protection. This page synthesizes distributor pricing, drop-in NXP-family alternatives, and broadcast RF design guidance not consolidated in the manufacturer datasheet.
MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP
The NXP MRF6V4300NBR5 is a 300 W CW (continuous-wave) RF power N-channel enhancement-mode lateral MOSFET designed for high-frequency large-signal output and driver stages up to 600 MHz. It is supplied in the NI-1230 / TO-272 WB-4 ceramic-and-plastic overmolded package with bolt-down flange, and is characterized by 22 dB typical power gain at 450 MHz, 110 V drain-source breakdown voltage, and a 50 V typical operating drain voltage for VHF/UHF broadband amplifier service. A radio-frequency power MOSFET is a discrete transistor optimized to deliver large amounts of RF output power into a 50-ohm load while withstanding the high peak voltages and currents found in CW and pulsed amplifier chains. Compared to bipolar RF power transistors, lateral MOSFETs offer higher input impedance, simplified biasing, and better thermal stability. The MRF6V4300N family sits at the high-power end of NXP's VHV6 (Very High Voltage 6th generation) lateral MOSFET portfolio, slotting between the lower-power MRF6V3090N series and higher-frequency N-channel devices targeted at 1 GHz and above. Key features include broadband performance from 10 MHz to 600 MHz, 22 dB power gain, integrated ESD protection, internally matched input on related part numbers, and the ability to survive 10:1 VSWR at all phase angles when operated at 50 V Vdd. Devices are characterized with series-equivalent large-signal impedance parameters to simplify class AB/AB-F amplifier matching-network synthesis using standard simulation tools. Typical applications include UHF television transmitters, industrial RF heating, scientific particle accelerators, CO2 laser drivers, and broadband CW driver amplifiers feeding higher-power tubes or solid-state pallets. The unmatched input and output give RF designers full freedom to design matching networks optimized for their specific frequency band and harmonic profile, trading pin count simplicity for RF flexibility. Design considerations for this device include mandatory output-load mismatch protection, robust heat-sinking through the bolt-down ceramic flange, and bias sequencing to prevent thermal runaway. Designers should verify with NXP's AN1977 application note and reference designs before committing the part to production layouts.