2ED2103S06FXUMA1 vs 2ED21064S06JXUMA1 Vergleich

Detaillierter Direktvergleich von 2ED2103S06FXUMA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2ED2103S06FXUMA1 2ED21064S06JXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,94 $0,85
Funktion Half-Bridge Gate Driver High-Side and Low-Side Gate Driver
Configuration Non-Inverting Half-Bridge (2 outputs, non-inverting)
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated Integrated
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Gehäuse PG-DSO-8-69 (DSO-8 with exposed pad) PG-DSO-14 (14-pin SOIC)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40C to +125C —
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS-Status Compliant ROHS3 Compliant
Topologie — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Input Logic Compatibility — 3.3 V / 5 V CMOS
Betriebstemperatur — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern