2EDL8034G4CXTMA1 vs 2ED2103S06FXUMA1 Vergleich

Detaillierter Direktvergleich von 2EDL8034G4CXTMA1 von Infineon und 2ED2103S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL8034G4CXTMA1 2ED2103S06FXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,55 $0,94
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting Non-Inverting
Bootstrap Voltage (Max) 120 V 675 V
Peak Source Current 3 A —
Peak Sink Current 4 A —
Anzahl der Ausgänge 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) —
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Betriebs-Sperrschichttemperatur -40 C to +125 C —
Gehäuse PG-VDSON-10-2 (DSN-10) with exposed pad PG-DSO-8-69 (DSO-8 with exposed pad)
Montageart Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Funktion — Half-Bridge Gate Driver
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Bootstrap Diode — Integrated
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Betriebstemperaturbereich — -40C to +125C
RoHS-Status — Compliant

Datenblätter & Ressourcen

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