2EDL8034G4CXTMA1 vs 2ED2103S06FXUMA1 对比
详细并排对比 2EDL8034G4CXTMA1 出自 Infineon 和 2ED2103S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2EDL8034G4CXTMA1 | 2ED2103S06FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $0.94 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | Non-Inverting |
| Bootstrap Voltage (Max) | 120 V | 675 V |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| 输出数量 | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| 工作结温 | -40 C to +125 C | — |
| 封装 | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-DSO-8-69 (DSO-8 with exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| 功能 | — | Half-Bridge Gate Driver |
| Technology | — | High-Voltage Level Shift (SOI) |
| Number of Drivers | — | 2 (high-side + low-side) |
| Driven Device Type | — | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Bootstrap Diode | — | Integrated |
| Logic Input Compatibility | — | 3.3 V / 5 V |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| 工作温度范围 | — | -40C to +125C |
| RoHS 状态 | — | Compliant |