2EDL8034G4CXTMA1 vs 2ED2103S06FXUMA1 比較
詳細な並列比較: 2EDL8034G4CXTMA1 メーカー: Infineon および 2ED2103S06FXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | 2EDL8034G4CXTMA1 | 2ED2103S06FXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.55 | $0.94 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | Non-Inverting |
| Bootstrap Voltage (Max) | 120 V | 675 V |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| 出力数 | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| 動作接合温度 | -40 C to +125 C | — |
| パッケージ | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-DSO-8-69 (DSO-8 with exposed pad) |
| 実装タイプ | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSLレベル | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| 機能 | — | Half-Bridge Gate Driver |
| Technology | — | High-Voltage Level Shift (SOI) |
| Number of Drivers | — | 2 (high-side + low-side) |
| Driven Device Type | — | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Bootstrap Diode | — | Integrated |
| Logic Input Compatibility | — | 3.3 V / 5 V |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| 動作温度範囲 | — | -40C to +125C |
| RoHS ステータス | — | Compliant |