2EDL8034G4CXTMA1 vs 2ED2103S06FXUMA1 Comparison

Detailed side-by-side comparison of 2EDL8034G4CXTMA1 by Infineon and 2ED2103S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDL8034G4CXTMA1 2ED2103S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting Non-Inverting
Bootstrap Voltage (Max) 120 V 675 V
Peak Source Current 3 A —
Peak Sink Current 4 A —
Number of Outputs 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V —
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) —
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Operating Junction Temperature -40 C to +125 C —
Package PG-VDSON-10-2 (DSN-10) with exposed pad PG-DSO-8-69 (DSO-8 with exposed pad)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Function — Half-Bridge Gate Driver
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Bootstrap Diode — Integrated
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Operating Temperature Range — -40C to +125C
RoHS Status — Compliant

Datasheets & Resources

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