2EDL8034G4CXTMA1 vs 2ED2103S06FXUMA1 비교
다음의 상세 나란히 비교: 2EDL8034G4CXTMA1 제조: Infineon 및 2ED2103S06FXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2EDL8034G4CXTMA1 | 2ED2103S06FXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.55 | $0.94 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | Non-Inverting |
| Bootstrap Voltage (Max) | 120 V | 675 V |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| 출력 수 | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | — |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | — |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| 동작 접합 온도 | -40 C to +125 C | — |
| 패키지 | PG-VDSON-10-2 (DSN-10) with exposed pad | PG-DSO-8-69 (DSO-8 with exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSL 레벨 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| 기능 | — | Half-Bridge Gate Driver |
| Technology | — | High-Voltage Level Shift (SOI) |
| Number of Drivers | — | 2 (high-side + low-side) |
| Driven Device Type | — | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Bootstrap Diode | — | Integrated |
| Logic Input Compatibility | — | 3.3 V / 5 V |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| 동작 온도 범위 | — | -40C to +125C |
| RoHS 상태 | — | Compliant |