6ED003L02F2XUMA1 vs 6EDL04N02PRXUMA1 Vergleich

Detaillierter Direktvergleich von 6ED003L02F2XUMA1 von Infineon und 6EDL04N02PRXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter 6ED003L02F2XUMA1 6EDL04N02PRXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,31 $2,32
Product Type Three-phase gate driver IC 3-Phase Gate Driver IC
Topologie Half-bridge, 3-phase, high-side / low-side —
Anzahl der Ausgänge 6 (3 high-side + 3 low-side) —
Maximum Blocking Voltage 200 V +180 V (VS referenced to GND for high side)
Supported Power Switches 180 V-class IGBTs, power MOSFETs —
Gate Drive Current (typ.) 0.375 A (source/sink) —
Output Polarity Inverting —
Over-Current Protection (OCP) Integrated comparator with FAULT output —
Enable Input Yes (hardware shutdown) —
FAULT Reporting Yes (open-drain fault output) —
Level-shift Technology LS-SOI (Infineon proprietary) —
Gehäuse PG-TSSOP-28 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Packaging Form Tape & Reel (XUMA1 suffix) —
Betriebstemperatur -40 C to +125 C (industrial) —
Compliance EU RoHS compliant —
Montageart Surface Mount Surface Mount
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) — 0.375 A
Sink Current (typ.) — 0.75 A
Bootstrap Diode — Integrated (BSD) on all 3 high-side drivers
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Betriebstemperaturbereich — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V
MSL-Level — MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
RoHS-Status — Compliant

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