6ED003L02F2XUMA1 vs 6EDL04N02PRXUMA1 Comparación

Comparación detallada lado a lado de 6ED003L02F2XUMA1 por Infineon y 6EDL04N02PRXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Activo

Comparación de especificaciones

Parámetro 6ED003L02F2XUMA1 6EDL04N02PRXUMA1
Marca Infineon Infineon
Categoría Power MOSFET Drivers Power MOSFET Drivers
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $3,31 $2,32
Product Type Three-phase gate driver IC 3-Phase Gate Driver IC
Topología Half-bridge, 3-phase, high-side / low-side —
Número de salidas 6 (3 high-side + 3 low-side) —
Maximum Blocking Voltage 200 V +180 V (VS referenced to GND for high side)
Supported Power Switches 180 V-class IGBTs, power MOSFETs —
Gate Drive Current (typ.) 0.375 A (source/sink) —
Output Polarity Inverting —
Over-Current Protection (OCP) Integrated comparator with FAULT output —
Enable Input Yes (hardware shutdown) —
FAULT Reporting Yes (open-drain fault output) —
Level-shift Technology LS-SOI (Infineon proprietary) —
Encapsulado PG-TSSOP-28 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Packaging Form Tape & Reel (XUMA1 suffix) —
Temperatura de funcionamiento -40 C to +125 C (industrial) —
Compliance EU RoHS compliant —
Tipo de montaje Surface Mount Surface Mount
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) — 0.375 A
Sink Current (typ.) — 0.75 A
Bootstrap Diode — Integrated (BSD) on all 3 high-side drivers
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Rango de temperatura de funcionamiento — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V
Nivel MSL — MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
Estado RoHS — Compliant

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