6ED003L02F2XUMA1 vs 6EDL04N02PRXUMA1 비교
다음의 상세 나란히 비교: 6ED003L02F2XUMA1 제조: Infineon 및 6EDL04N02PRXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
6ED003L02F2XUMA1 - 200V 3-Phase Gate Driver IC, OCP, FAULT | Infineon
6ED003L02F2XUMA1 ✓ 활성사양 비교
| 파라미터 | 6ED003L02F2XUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.31 | $2.32 |
| Product Type | Three-phase gate driver IC | 3-Phase Gate Driver IC |
| 토폴로지 | Half-bridge, 3-phase, high-side / low-side | — |
| 출력 수 | 6 (3 high-side + 3 low-side) | — |
| Maximum Blocking Voltage | 200 V | +180 V (VS referenced to GND for high side) |
| Supported Power Switches | 180 V-class IGBTs, power MOSFETs | — |
| Gate Drive Current (typ.) | 0.375 A (source/sink) | — |
| Output Polarity | Inverting | — |
| Over-Current Protection (OCP) | Integrated comparator with FAULT output | — |
| Enable Input | Yes (hardware shutdown) | — |
| FAULT Reporting | Yes (open-drain fault output) | — |
| Level-shift Technology | LS-SOI (Infineon proprietary) | — |
| 패키지 | PG-TSSOP-28 | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| Packaging Form | Tape & Reel (XUMA1 suffix) | — |
| 동작 온도 | -40 C to +125 C (industrial) | — |
| Compliance | EU RoHS compliant | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Driver Configuration | — | Half-bridge (3 high-side + 3 low-side) |
| Rated Supply Voltage (VCC) | — | 200 V class (operating range 10 V to 20 V on VCC) |
| Source Current (typ.) | — | 0.375 A |
| Sink Current (typ.) | — | 0.75 A |
| Bootstrap Diode | — | Integrated (BSD) on all 3 high-side drivers |
| Over-Current Protection | — | Yes (single-shunt, ITRIP/CIN pin) |
| Enable Pin (EN) | — | Yes (active-high) |
| Fault Output (nFAULT) | — | Yes (active-low, open-drain) |
| Input Logic Compatibility | — | CMOS / LSTTL, 3.3 V and 5 V |
| Interlocking / Anti-shoot-through | — | Yes (built-in per phase pair) |
| Process Technology | — | Thin-film SOI (Silicon-On-Insulator) |
| 동작 온도 범위 | — | -40 °C to +125 °C |
| Maximum Junction Temperature | — | +150 °C |
| Target Switches | — | MOSFETs up to 180 V, IGBTs up to 180 V |
| MSL 레벨 | — | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| RoHS 상태 | — | Compliant |