6ED003L02F2XUMA1 vs 6EDL04N02PRXUMA1 Comparação

Comparação detalhada lado a lado de 6ED003L02F2XUMA1 por Infineon e 6EDL04N02PRXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Ativo

Comparação de especificações

Parâmetro 6ED003L02F2XUMA1 6EDL04N02PRXUMA1
Marca Infineon Infineon
Categoria Power MOSFET Drivers Power MOSFET Drivers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $3,31 $2,32
Product Type Three-phase gate driver IC 3-Phase Gate Driver IC
Topologia Half-bridge, 3-phase, high-side / low-side —
Número de saídas 6 (3 high-side + 3 low-side) —
Maximum Blocking Voltage 200 V +180 V (VS referenced to GND for high side)
Supported Power Switches 180 V-class IGBTs, power MOSFETs —
Gate Drive Current (typ.) 0.375 A (source/sink) —
Output Polarity Inverting —
Over-Current Protection (OCP) Integrated comparator with FAULT output —
Enable Input Yes (hardware shutdown) —
FAULT Reporting Yes (open-drain fault output) —
Level-shift Technology LS-SOI (Infineon proprietary) —
Encapsulamento PG-TSSOP-28 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Packaging Form Tape & Reel (XUMA1 suffix) —
Temperatura de operação -40 C to +125 C (industrial) —
Compliance EU RoHS compliant —
Tipo de montagem Surface Mount Surface Mount
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) — 0.375 A
Sink Current (typ.) — 0.75 A
Bootstrap Diode — Integrated (BSD) on all 3 high-side drivers
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Faixa de temperatura de operação — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V
Nível MSL — MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
Status RoHS — Compliant

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