6ED003L02F2XUMA1 vs 6EDL04N02PRXUMA1 比較
詳細な並列比較: 6ED003L02F2XUMA1 メーカー: Infineon および 6EDL04N02PRXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
6ED003L02F2XUMA1 - 200V 3-Phase Gate Driver IC, OCP, FAULT | Infineon
6ED003L02F2XUMA1 ✓ 生産中仕様比較
| パラメータ | 6ED003L02F2XUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3.31 | $2.32 |
| Product Type | Three-phase gate driver IC | 3-Phase Gate Driver IC |
| トポロジー | Half-bridge, 3-phase, high-side / low-side | — |
| 出力数 | 6 (3 high-side + 3 low-side) | — |
| Maximum Blocking Voltage | 200 V | +180 V (VS referenced to GND for high side) |
| Supported Power Switches | 180 V-class IGBTs, power MOSFETs | — |
| Gate Drive Current (typ.) | 0.375 A (source/sink) | — |
| Output Polarity | Inverting | — |
| Over-Current Protection (OCP) | Integrated comparator with FAULT output | — |
| Enable Input | Yes (hardware shutdown) | — |
| FAULT Reporting | Yes (open-drain fault output) | — |
| Level-shift Technology | LS-SOI (Infineon proprietary) | — |
| パッケージ | PG-TSSOP-28 | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| Packaging Form | Tape & Reel (XUMA1 suffix) | — |
| 動作温度 | -40 C to +125 C (industrial) | — |
| Compliance | EU RoHS compliant | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Driver Configuration | — | Half-bridge (3 high-side + 3 low-side) |
| Rated Supply Voltage (VCC) | — | 200 V class (operating range 10 V to 20 V on VCC) |
| Source Current (typ.) | — | 0.375 A |
| Sink Current (typ.) | — | 0.75 A |
| Bootstrap Diode | — | Integrated (BSD) on all 3 high-side drivers |
| Over-Current Protection | — | Yes (single-shunt, ITRIP/CIN pin) |
| Enable Pin (EN) | — | Yes (active-high) |
| Fault Output (nFAULT) | — | Yes (active-low, open-drain) |
| Input Logic Compatibility | — | CMOS / LSTTL, 3.3 V and 5 V |
| Interlocking / Anti-shoot-through | — | Yes (built-in per phase pair) |
| Process Technology | — | Thin-film SOI (Silicon-On-Insulator) |
| 動作温度範囲 | — | -40 °C to +125 °C |
| Maximum Junction Temperature | — | +150 °C |
| Target Switches | — | MOSFETs up to 180 V, IGBTs up to 180 V |
| MSLレベル | — | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| RoHS ステータス | — | Compliant |