6ED003L02F2XUMA1 vs 6EDL04N02PRXUMA1 Comparison

Detailed side-by-side comparison of 6ED003L02F2XUMA1 by Infineon and 6EDL04N02PRXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 βœ“ Active

Specification Comparison

Parameter 6ED003L02F2XUMA1 6EDL04N02PRXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.31 $2.32
Product Type Three-phase gate driver IC 3-Phase Gate Driver IC
Topology Half-bridge, 3-phase, high-side / low-side β€”
Number of Outputs 6 (3 high-side + 3 low-side) β€”
Maximum Blocking Voltage 200 V +180 V (VS referenced to GND for high side)
Supported Power Switches 180 V-class IGBTs, power MOSFETs β€”
Gate Drive Current (typ.) 0.375 A (source/sink) β€”
Output Polarity Inverting β€”
Over-Current Protection (OCP) Integrated comparator with FAULT output β€”
Enable Input Yes (hardware shutdown) β€”
FAULT Reporting Yes (open-drain fault output) β€”
Level-shift Technology LS-SOI (Infineon proprietary) β€”
Package PG-TSSOP-28 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Packaging Form Tape & Reel (XUMA1 suffix) β€”
Operating Temperature -40 C to +125 C (industrial) β€”
Compliance EU RoHS compliant β€”
Mounting Type Surface Mount Surface Mount
Driver Configuration β€” Half-bridge (3 high-side + 3 low-side)
Rated Supply Voltage (VCC) β€” 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) β€” 0.375 A
Sink Current (typ.) β€” 0.75 A
Bootstrap Diode β€” Integrated (BSD) on all 3 high-side drivers
Over-Current Protection β€” Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) β€” Yes (active-high)
Fault Output (nFAULT) β€” Yes (active-low, open-drain)
Input Logic Compatibility β€” CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through β€” Yes (built-in per phase pair)
Process Technology β€” Thin-film SOI (Silicon-On-Insulator)
Operating Temperature Range β€” -40 Β°C to +125 Β°C
Maximum Junction Temperature β€” +150 Β°C
Target Switches β€” MOSFETs up to 180 V, IGBTs up to 180 V
MSL Level β€” MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
RoHS Status β€” Compliant

Datasheets & Resources

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