BSS138LT1G-VB vs 2N7002LT1G Vergleich
Detaillierter Direktvergleich von BSS138LT1G-VB von VBsemi Elec und 2N7002LT1G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS138LT1G-VB | 2N7002LT1G |
|---|---|---|
| Marke | VBsemi Elec | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,02 |
| Transistortyp | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Drain Current (Id) | 200 mA (Ta) | — |
| Power Dissipation (Pd) | 225 mW (Ta) | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Configuration | Single FET | Single FET |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) Max | [DATA_NEEDED: RDS(on)] | — |
| Drive Voltage | [DATA_NEEDED: drive voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| RoHS-Status | Compliant | — |
| Manufacturer | VBsemi Elec | onsemi (ON Semiconductor) |
| Equivalent To | onsemi BSS138LT1G | — |
| Polarity | — | N-Channel |
| Channel Mode | — | Enhancement Mode |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Anzahl der Pins | — | 3 |
| Kategorie | — | Small Signal MOSFET |
| Technology | — | MOSFET |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | [DATA_NEEDED: packaging type] |