BSS138LT1G-VB vs 2N7002LT1G Comparación
Comparación detallada lado a lado de BSS138LT1G-VB por VBsemi Elec y 2N7002LT1G por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS138LT1G-VB | 2N7002LT1G |
|---|---|---|
| Marca | VBsemi Elec | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,02 | $0,02 |
| Tipo de transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Drain Current (Id) | 200 mA (Ta) | — |
| Power Dissipation (Pd) | 225 mW (Ta) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Configuration | Single FET | Single FET |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) Max | [DATA_NEEDED: RDS(on)] | — |
| Drive Voltage | [DATA_NEEDED: drive voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Estado RoHS | Compliant | — |
| Manufacturer | VBsemi Elec | onsemi (ON Semiconductor) |
| Equivalent To | onsemi BSS138LT1G | — |
| Polarity | — | N-Channel |
| Channel Mode | — | Enhancement Mode |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Número de pines | — | 3 |
| Categoría | — | Small Signal MOSFET |
| Technology | — | MOSFET |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | [DATA_NEEDED: packaging type] |