BSS138LT1G-VB vs 2N7002LT1G 对比

详细并排对比 BSS138LT1G-VB 出自 VBsemi Elec 和 2N7002LT1G 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ 量产中
onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ 量产中

规格对比

参数 BSS138LT1G-VB 2N7002LT1G
品牌 VBsemi Elec onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.02 $0.02
晶体管类型 N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (Vdss) 50 V —
Continuous Drain Current (Id) 200 mA (Ta) —
Power Dissipation (Pd) 225 mW (Ta) —
安装类型 Surface Mount Surface Mount
封装 SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage] —
RDS(on) Max [DATA_NEEDED: RDS(on)] —
Drive Voltage [DATA_NEEDED: drive voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 Compliant —
Manufacturer VBsemi Elec onsemi (ON Semiconductor)
Equivalent To onsemi BSS138LT1G —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
引脚数 — 3
分类 — Small Signal MOSFET
Technology — MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
工作温度范围 — [DATA_NEEDED: operating temperature range]
Packaging — [DATA_NEEDED: packaging type]

数据手册与资源

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