FDP030N06 vs IRFB7534PBF Vergleich

Detaillierter Direktvergleich von FDP030N06 von onsemi und IRFB7534PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter FDP030N06 IRFB7534PBF
Marke onsemi Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,89 $1,85
FET Type N-Channel MOSFET —
Technology PowerTrench (Trench) StrongIRFET™ (planar N-channel)
Drain to Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ 25C 120 A (Tc) —
Continuous Drain Current (datasheet rating) 193 A (Tc, datasheet title rating) —
RDS(on) Max @ Id, Vgs 3.2 mOhm —
RDS(on) Typ 2.6 mOhm —
Power Dissipation (Tc) 231 W (Tc) —
Gate Drive Type Standard level gate drive —
Switching Speed Fast —
Gate Input Resistance Low gate input resistance (low gate charge) —
Avalanche Test 100% avalanche tested —
Gehäuse TO-220-3 (3+Tab) TO-220AB
Montageart Through Hole Through Hole
Packing Tube —
Typical Applications Power supply, switching applications —
RoHS-Status [DATA_NEEDED: RoHS compliance status] Compliant (PbF suffix)
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
Betriebstemperaturbereich — -55C to +175C
MSL-Level — MSL1 (unlimited floor life)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern