FDP030N06 vs IRFB7534PBF Comparison

Detailed side-by-side comparison of FDP030N06 by onsemi and IRFB7534PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter FDP030N06 IRFB7534PBF
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.89 $1.85
FET Type N-Channel MOSFET β€”
Technology PowerTrench (Trench) StrongIRFETβ„’ (planar N-channel)
Drain to Source Voltage (Vdss) 60 V β€”
Continuous Drain Current (Id) @ 25C 120 A (Tc) β€”
Continuous Drain Current (datasheet rating) 193 A (Tc, datasheet title rating) β€”
RDS(on) Max @ Id, Vgs 3.2 mOhm β€”
RDS(on) Typ 2.6 mOhm β€”
Power Dissipation (Tc) 231 W (Tc) β€”
Gate Drive Type Standard level gate drive β€”
Switching Speed Fast β€”
Gate Input Resistance Low gate input resistance (low gate charge) β€”
Avalanche Test 100% avalanche tested β€”
Package TO-220-3 (3+Tab) TO-220AB
Mounting Type Through Hole Through Hole
Packing Tube β€”
Typical Applications Power supply, switching applications β€”
RoHS Status [DATA_NEEDED: RoHS compliance status] Compliant (PbF suffix)
Manufacturer β€” Infineon Technologies
Part Number β€” IRFB7534PBF
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) max β€” 60 V
Continuous Drain Current (ID) at Tc=25C β€” 195 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C β€” 294 W
On-Resistance RDS(on) max at VGS=10V β€” 2.4 mOhm
Gate Threshold Voltage VGS(th) β€” 3.7 V (typ)
Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Avalanche Energy Rated β€” Yes
Operating Temperature Range β€” -55C to +175C
MSL Level β€” MSL1 (unlimited floor life)

Datasheets & Resources

Browse All Products Create BOM Request Quote