FDP030N06 vs IRFB7534PBF 对比

详细并排对比 FDP030N06 出自 onsemi 和 IRFB7534PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 FDP030N06 IRFB7534PBF
品牌 onsemi Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.89 $1.85
FET Type N-Channel MOSFET —
Technology PowerTrench (Trench) StrongIRFET™ (planar N-channel)
Drain to Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ 25C 120 A (Tc) —
Continuous Drain Current (datasheet rating) 193 A (Tc, datasheet title rating) —
RDS(on) Max @ Id, Vgs 3.2 mOhm —
RDS(on) Typ 2.6 mOhm —
Power Dissipation (Tc) 231 W (Tc) —
Gate Drive Type Standard level gate drive —
Switching Speed Fast —
Gate Input Resistance Low gate input resistance (low gate charge) —
Avalanche Test 100% avalanche tested —
封装 TO-220-3 (3+Tab) TO-220AB
安装类型 Through Hole Through Hole
Packing Tube —
Typical Applications Power supply, switching applications —
RoHS 状态 [DATA_NEEDED: RoHS compliance status] Compliant (PbF suffix)
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
工作温度范围 — -55C to +175C
MSL 等级 — MSL1 (unlimited floor life)

数据手册与资源

浏览全部产品 创建 BOM 获取报价