H5AN4G6NBJR-VKC vs H5ANAG6NBJR-PBC Vergleich
Detaillierter Direktvergleich von H5AN4G6NBJR-VKC von SK hynix und H5ANAG6NBJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G6NBJR-VKC | H5ANAG6NBJR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,96 | $6,45 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 4 Gbit | — |
| Memory Organization | 256M x 16 | — |
| Datenrate | 2666 Mbps | — |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | — |
| Operating Current | 38 mA (typical, per distributor data) | — |
| Schnittstelle | Parallel | — |
| Technology | CMOS | — |
| Betriebstemperatur | -40C to +95C | [DATA_NEEDED: Operating Temperature] |
| Gehäuse | FBGA-96 / TFBGA (PBGA96) | FBGA-96 |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| Montageart | Surface Mount | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Density | — | 16 Gb (2 GB) |
| Versorgungsspannung | — | 1.2 V |
| Generation Max Data Rate | — | 3200 MT/s (family max) |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Speed Bin (PBC) | — | [DATA_NEEDED: Speed grade MT/s] |
| Speicherorganisation | — | [DATA_NEEDED: Organization x16/x8] |