H5AN4G6NBJR-VKC vs H5ANAG6NBJR-PBC Comparison
Detailed side-by-side comparison of H5AN4G6NBJR-VKC by SK hynix and H5ANAG6NBJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN4G6NBJR-VKC | H5ANAG6NBJR-PBC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.96 | $6.45 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 4 Gbit | — |
| Memory Organization | 256M x 16 | — |
| Data Rate | 2666 Mbps | — |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | — |
| Operating Current | 38 mA (typical, per distributor data) | — |
| Interface | Parallel | — |
| Technology | CMOS | — |
| Operating Temperature | -40C to +95C | [DATA_NEEDED: Operating Temperature] |
| Package | FBGA-96 / TFBGA (PBGA96) | FBGA-96 |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| Mounting Type | Surface Mount | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Density | — | 16 Gb (2 GB) |
| Supply Voltage | — | 1.2 V |
| Generation Max Data Rate | — | 3200 MT/s (family max) |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Speed Bin (PBC) | — | [DATA_NEEDED: Speed grade MT/s] |
| Organization | — | [DATA_NEEDED: Organization x16/x8] |