H5AN4G6NBJR-VKC vs H5ANAG6NBJR-PBC 对比
详细并排对比 H5AN4G6NBJR-VKC 出自 SK hynix 和 H5ANAG6NBJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G6NBJR-VKC | H5ANAG6NBJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.96 | $6.45 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | — |
| Memory Organization | 256M x 16 | — |
| 数据速率 | 2666 Mbps | — |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | — |
| Operating Current | 38 mA (typical, per distributor data) | — |
| 接口 | Parallel | — |
| Technology | CMOS | — |
| 工作温度 | -40C to +95C | [DATA_NEEDED: Operating Temperature] |
| 封装 | FBGA-96 / TFBGA (PBGA96) | FBGA-96 |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| 安装类型 | Surface Mount | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Density | — | 16 Gb (2 GB) |
| 电源电压 | — | 1.2 V |
| Generation Max Data Rate | — | 3200 MT/s (family max) |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Speed Bin (PBC) | — | [DATA_NEEDED: Speed grade MT/s] |
| 存储组织 | — | [DATA_NEEDED: Organization x16/x8] |