H5AN4G8NBJR-UHI vs K4A8G085WC-BCWE Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-UHI von SK hynix und K4A8G085WC-BCWE von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-UHI | K4A8G085WC-BCWE |
|---|---|---|
| Marke | SK hynix | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,25 | $7,38 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 8 Gb |
| Speicherorganisation | 512M x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Gehäuse | FBGA-78 (78-ball fine-pitch BGA) | 78FBGA |
| Montageart | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Datenrate | 2400 MT/s | 3200 Mbps (DDR4-3200) |
| Schnittstelle | JEDEC DDR4 SDRAM | DDR4 (parallel, double data rate) |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | Standard DDR4 refresh mechanisms |
| Termination | On-die termination (ODT) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS-Latenz | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Versorgungsspannung | — | 1.2 V |
| Application Class | — | Computing / Embedded main memory |
| Manufacturer | — | Samsung Electronics |
| Bank Group Architecture | — | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | — | -BCWE (DDR4-3200, commercial temp) |
| On-Die Termination | — | Yes (DDR4 ODT) |