H5AN4G8NBJR-UHI vs K4A8G085WC-BCWE 对比
详细并排对比 H5AN4G8NBJR-UHI 出自 SK hynix 和 K4A8G085WC-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G8NBJR-UHI | K4A8G085WC-BCWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.25 | $7.38 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 8 Gb |
| 存储组织 | 512M x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封装 | FBGA-78 (78-ball fine-pitch BGA) | 78FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| 数据速率 | 2400 MT/s | 3200 Mbps (DDR4-3200) |
| 接口 | JEDEC DDR4 SDRAM | DDR4 (parallel, double data rate) |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | Standard DDR4 refresh mechanisms |
| Termination | On-die termination (ODT) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS 延迟 | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| 电源电压 | — | 1.2 V |
| Application Class | — | Computing / Embedded main memory |
| Manufacturer | — | Samsung Electronics |
| Bank Group Architecture | — | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | — | -BCWE (DDR4-3200, commercial temp) |
| On-Die Termination | — | Yes (DDR4 ODT) |