IAUCN08S7L013ATMA1 vs ISC045N03L5SATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7L013ATMA1 von Infineon und ISC045N03L5SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN08S7L013ATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,96 | $0,51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΩ | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | [DATA_NEEDED: continuous drain current at TC=25C] | — |
| Continuous Drain Current (TJ) | 293 A | — |
| Power Dissipation (TC) | 219 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage range] | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 °C to +150 °C |
| Gehäuse | PG-TDSON-8-53 (TDSON-8 FL) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Qualification | AEC-Q101 (automotive) | — |
| RoHS-Status | Compliant | Compliant |
| Packaging | Tape & Reel (suffix ATMA1) | — |
| Part Number | — | ISC045N03L5SATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | OptiMOS 5 / Trench |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |