IAUCN08S7L013ATMA1 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L013ATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L013ATMA1
IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN08S7L013ATMA1 β ActiveInfineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L013ATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.96 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΞ© | β |
| Continuous Drain Current (TC = 25 Β°C) | [DATA_NEEDED: continuous drain current at TC=25C] | β |
| Continuous Drain Current (TJ) | 293 A | β |
| Power Dissipation (TC) | 219 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage range] | β |
| Gate Drive Voltage (typical) | 10 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 Β°C to +150 Β°C |
| Package | PG-TDSON-8-53 (TDSON-8 FL) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Qualification | AEC-Q101 (automotive) | β |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel (suffix ATMA1) | β |
| Part Number | β | ISC045N03L5SATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS 5 / Trench |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2 V @ ID=250 Β΅A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Total Gate Charge (Qg) | β | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | β | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |