IAUCN08S7L013ATMA1 vs ISC045N03L5SATMA1 对比

详细并排对比 IAUCN08S7L013ATMA1 出自 Infineon 和 ISC045N03L5SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 ✓ 量产中
Infineon
ISC045N03L5SATMA1 ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon

ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon

ISC045N03L5SATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7L013ATMA1 ISC045N03L5SATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.96 $0.51
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V 30 V
Maximum On-Resistance (RDS(on) max) 1.26 mΩ —
连续漏极电流(TC=25°C) [DATA_NEEDED: continuous drain current at TC=25C] —
Continuous Drain Current (TJ) 293 A —
Power Dissipation (TC) 219 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage range] —
Gate Drive Voltage (typical) 10 V —
工作温度范围 -55 °C to +175 °C -55 °C to +150 °C
封装 PG-TDSON-8-53 (TDSON-8 FL) SuperSO8 5x6 (PG-TDSON-8-6)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] —
Qualification AEC-Q101 (automotive) —
RoHS 状态 Compliant Compliant
Packaging Tape & Reel (suffix ATMA1) —
Part Number — ISC045N03L5SATMA1
晶体管类型 — N-Channel MOSFET
Technology — OptiMOS 5 / Trench
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — 13 nC @ VGS=10 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W

数据手册与资源

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