IPG20N04S408ATMA1 vs IPG20N04S4L11ATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N04S408ATMA1 von Infineon und IPG20N04S4L11ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
IPG20N04S4L11ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPG20N04S408ATMA1 | IPG20N04S4L11ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,39 |
| FET Type | Dual N-Channel | 2 N-Channel (Dual) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 trench |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| Betriebs-Sperrschichttemperatur | -55 degC to +175 degC | — |
| Gehäuse | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260 degC peak reflow) | 1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| RoHS-Status | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ 25C | — | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | — | 11.6 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Power Dissipation (PD) | — | 41 W |
| Betriebstemperaturbereich | — | -55C to +175C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |