IPG20N04S408ATMA1 vs IPG20N04S4L11ATMA1 比較
詳細な並列比較: IPG20N04S408ATMA1 メーカー: Infineon および IPG20N04S4L11ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPG20N04S408ATMA1 | IPG20N04S4L11ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $0.39 |
| FET Type | Dual N-Channel | 2 N-Channel (Dual) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 trench |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| 動作接合温度 | -55 degC to +175 degC | — |
| パッケージ | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL1 (260 degC peak reflow) | 1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| RoHS ステータス | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ 25C | — | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | — | 11.6 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Power Dissipation (PD) | — | 41 W |
| 動作温度範囲 | — | -55C to +175C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |