IPG20N04S408ATMA1 vs IPG20N04S4L11ATMA1 Comparison

Detailed side-by-side comparison of IPG20N04S408ATMA1 by Infineon and IPG20N04S4L11ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N04S408ATMA1

IPG20N04S408ATMA1 - Dual N-Ch 40V 20A 7.6mOhm OptiMOS | Infineon

IPG20N04S408ATMA1 βœ“ Active
Infineon
IPG20N04S4L11ATMA1

IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon

IPG20N04S4L11ATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N04S408ATMA1 IPG20N04S4L11ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.39
FET Type Dual N-Channel 2 N-Channel (Dual)
Technology OptiMOS (trench MOSFET) OptiMOS-T2 trench
Drain-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D, per channel) 20 A at 25 degC case β€”
R_DS(on) max @ V_GS=10V 7.6 mOhm β€”
Maximum Power Dissipation (P_D) 65 W β€”
Operating Junction Temperature -55 degC to +175 degC β€”
Package PG-TDSON-8-4 (SuperSO8 dual) PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (260 degC peak reflow) 1 (260C peak reflow)
AEC-Q101 Qualified Yes β€”
RoHS Status Compliant (Green Product) Compliant (Green Product)
Avalanche Rated 100 percent tested β€”
Channel Count 2 (independent) β€”
Operating Mode Enhancement mode, Normal Level β€”
FET Feature β€” Logic Level Gate
Drain-to-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) @ 25C β€” 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A β€” 11.6 mOhm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) β€” 41 W
Operating Temperature Range β€” -55C to +175C
Avalanche Rating β€” 100% Avalanche Tested
Automotive Qualification β€” AEC-Q101 Qualified

Datasheets & Resources

Browse All Products Create BOM Request Quote