IPG20N04S408ATMA1 vs IPG20N04S4L11ATMA1 对比
详细并排对比 IPG20N04S408ATMA1 出自 Infineon 和 IPG20N04S4L11ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPG20N04S408ATMA1 | IPG20N04S4L11ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.39 |
| FET Type | Dual N-Channel | 2 N-Channel (Dual) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 trench |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| 工作结温 | -55 degC to +175 degC | — |
| 封装 | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (260 degC peak reflow) | 1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| RoHS 状态 | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ 25C | — | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | — | 11.6 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Power Dissipation (PD) | — | 41 W |
| 工作温度范围 | — | -55C to +175C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |