IRF7351TRPBF vs FDS6575 Vergleich
Detaillierter Direktvergleich von IRF7351TRPBF von Infineon und FDS6575 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7351TRPBF | FDS6575 |
|---|---|---|
| Marke | Infineon | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $0,28 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7351TRPBF | — |
| Configuration | Dual N-Channel MOSFET (Half-Bridge) | Single MOSFET |
| Drain-Source Voltage (VDS) | 60 V | -20 V |
| Continuous Drain Current (ID) | 8 A | -10 A |
| On-Resistance RDS(on) max | 17.8 mOhm | — |
| On-Resistance RDS(on) typ (per digchips) | 0.0137 ohm (13.7 mOhm) | — |
| Total Gate Charge (Qg) | 24 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) | 2 W | — |
| Technology | IR MOSFET (HEXFET trench) | PowerTrench (rugged gate) |
| Gehäuse | 8-SO (SO-8 / SOIC-8) Surface Mount | SOIC-8 (SO-8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Typical Application | Synchronous Rectifier for Isolated DC-DC Converters | — |
| RoHS-Status | Compliant (PBF suffix = lead-free) | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL Level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Polarity | — | P-Channel |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| Gate-Schwellenspannung | — | [DATA_NEEDED: gate threshold voltage range] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |