IRF7351TRPBF vs FDS6575 对比
详细并排对比 IRF7351TRPBF 出自 Infineon 和 FDS6575 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7351TRPBF | FDS6575 |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.68 | $0.28 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7351TRPBF | — |
| Configuration | Dual N-Channel MOSFET (Half-Bridge) | Single MOSFET |
| Drain-Source Voltage (VDS) | 60 V | -20 V |
| Continuous Drain Current (ID) | 8 A | -10 A |
| On-Resistance RDS(on) max | 17.8 mOhm | — |
| On-Resistance RDS(on) typ (per digchips) | 0.0137 ohm (13.7 mOhm) | — |
| Total Gate Charge (Qg) | 24 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) | 2 W | — |
| Technology | IR MOSFET (HEXFET trench) | PowerTrench (rugged gate) |
| 封装 | 8-SO (SO-8 / SOIC-8) Surface Mount | SOIC-8 (SO-8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C (junction) | — |
| Typical Application | Synchronous Rectifier for Isolated DC-DC Converters | — |
| RoHS 状态 | Compliant (PBF suffix = lead-free) | Compliant |
| Lead-Free | Yes | — |
| MSL 等级 | [DATA_NEEDED: MSL Level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Polarity | — | P-Channel |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| 栅极阈值电压 | — | [DATA_NEEDED: gate threshold voltage range] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| 工作温度范围 | — | [DATA_NEEDED: operating temperature range] |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |