IRF7351TRPBF vs FDS6575 Сравнение
Подробное сравнение бок о бок IRF7351TRPBF от Infineon и FDS6575 от onsemi. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF7351TRPBF | FDS6575 |
|---|---|---|
| Бренд | Infineon | onsemi |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,68 | $0,28 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7351TRPBF | — |
| Configuration | Dual N-Channel MOSFET (Half-Bridge) | Single MOSFET |
| Drain-Source Voltage (VDS) | 60 V | -20 V |
| Continuous Drain Current (ID) | 8 A | -10 A |
| On-Resistance RDS(on) max | 17.8 mOhm | — |
| On-Resistance RDS(on) typ (per digchips) | 0.0137 ohm (13.7 mOhm) | — |
| Total Gate Charge (Qg) | 24 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) | 2 W | — |
| Technology | IR MOSFET (HEXFET trench) | PowerTrench (rugged gate) |
| Корпус | 8-SO (SO-8 / SOIC-8) Surface Mount | SOIC-8 (SO-8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | -55C to +150C (junction) | — |
| Typical Application | Synchronous Rectifier for Isolated DC-DC Converters | — |
| Статус RoHS | Compliant (PBF suffix = lead-free) | Compliant |
| Lead-Free | Yes | — |
| Уровень MSL | [DATA_NEEDED: MSL Level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Polarity | — | P-Channel |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| Пороговое напряжение затвора | — | [DATA_NEEDED: gate threshold voltage range] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| Диапазон рабочих температур | — | [DATA_NEEDED: operating temperature range] |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |