IRF7351TRPBF vs FDS6575 비교
다음의 상세 나란히 비교: IRF7351TRPBF 제조: Infineon 및 FDS6575 제조: onsemi. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7351TRPBF | FDS6575 |
|---|---|---|
| 브랜드 | Infineon | onsemi |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.68 | $0.28 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7351TRPBF | — |
| Configuration | Dual N-Channel MOSFET (Half-Bridge) | Single MOSFET |
| Drain-Source Voltage (VDS) | 60 V | -20 V |
| Continuous Drain Current (ID) | 8 A | -10 A |
| On-Resistance RDS(on) max | 17.8 mOhm | — |
| On-Resistance RDS(on) typ (per digchips) | 0.0137 ohm (13.7 mOhm) | — |
| Total Gate Charge (Qg) | 24 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) | 2 W | — |
| Technology | IR MOSFET (HEXFET trench) | PowerTrench (rugged gate) |
| 패키지 | 8-SO (SO-8 / SOIC-8) Surface Mount | SOIC-8 (SO-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55C to +150C (junction) | — |
| Typical Application | Synchronous Rectifier for Isolated DC-DC Converters | — |
| RoHS 상태 | Compliant (PBF suffix = lead-free) | Compliant |
| Lead-Free | Yes | — |
| MSL 레벨 | [DATA_NEEDED: MSL Level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Polarity | — | P-Channel |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| 게이트 임계 전압 | — | [DATA_NEEDED: gate threshold voltage range] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| 동작 온도 범위 | — | [DATA_NEEDED: operating temperature range] |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |