IRFP260MPBF vs STW45NM50 Vergleich
Detaillierter Direktvergleich von IRFP260MPBF von Infineon und STW45NM50 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ AktivSpezifikationsvergleich
| Parameter | IRFP260MPBF | STW45NM50 |
|---|---|---|
| Marke | Infineon | STMicroelectronics |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,85 | $9,55 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | — |
| Drain-Source Voltage (VDS) | 200 V | 500 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 180 A |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max | 40 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance Ciss | 1560 pF | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg] | — |
| Betriebstemperaturbereich | -55C to +175C | -55°C to +150°C |
| Gehäuse / Bauform | TO-247AC (3-lead through-hole) | — |
| Montageart | Through Hole | Through Hole |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| MSL-Level | Not Applicable (through-hole) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at 25°C | — | 45 A |
| Continuous Drain Current (ID) at 100°C | — | 30 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.09 ohm |
| Gate Charge (Qg) | — | 120 nC |
| Avalanche Energy (EAS) | — | 1.2 J |
| Power Dissipation (PD) | — | 450 W |
| Gehäuse | — | TO-247 |
| Halogenfrei | — | Yes |