IRFP260MPBF vs STW45NM50 对比
详细并排对比 IRFP260MPBF 出自 Infineon 和 STW45NM50 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ 量产中规格对比
| 参数 | IRFP260MPBF | STW45NM50 |
|---|---|---|
| 品牌 | Infineon | STMicroelectronics |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.85 | $9.55 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | — |
| Drain-Source Voltage (VDS) | 200 V | 500 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 180 A |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max | 40 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance Ciss | 1560 pF | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg] | — |
| 工作温度范围 | -55C to +175C | -55°C to +150°C |
| 封装 / 外壳 | TO-247AC (3-lead through-hole) | — |
| 安装类型 | Through Hole | Through Hole |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| MSL 等级 | Not Applicable (through-hole) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at 25°C | — | 45 A |
| Continuous Drain Current (ID) at 100°C | — | 30 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.09 ohm |
| Gate Charge (Qg) | — | 120 nC |
| Avalanche Energy (EAS) | — | 1.2 J |
| Power Dissipation (PD) | — | 450 W |
| 封装 | — | TO-247 |
| 无卤 | — | Yes |