IRFR3710ZTRPBF vs IRFR540ZTRLPBF Vergleich
Detaillierter Direktvergleich von IRFR3710ZTRPBF von Infineon und IRFR540ZTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR3710ZTRPBF | IRFR540ZTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,42 | $0,82 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | 110 A |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: typical V] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55 °C to +175 °C |
| Technology | HEXFET (IR MOSFET) | IR MOSFET™ / HEXFET® |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK) surface mount |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 28.5 mΩ max at VGS=10V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±V rating] |
| Total Gate Charge (Qg) | — | 39 nC |
| Power Dissipation (PD) at TC | — | 91 W |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Packaging | — | Tape & Reel (TR-L), 800-piece leader/trailer |