IRFR3710ZTRPBF vs IRFR540ZTRLPBF 对比

详细并排对比 IRFR3710ZTRPBF 出自 Infineon 和 IRFR540ZTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ 量产中
Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ 量产中

规格对比

参数 IRFR3710ZTRPBF IRFR540ZTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $0.82
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 56 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] 110 A
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: typical V]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W —
工作结温 -55C to +175C -55 °C to +175 °C
Technology HEXFET (IR MOSFET) IR MOSFET™ / HEXFET®
封装 TO-252AA (DPAK) TO-252AA (DPAK) surface mount
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant —
Lead-Free Yes —
Continuous Drain Current (ID) at TC — 35 A
Static Drain-Source On-Resistance (RDS(on)) — 28.5 mΩ max at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Total Gate Charge (Qg) — 39 nC
Power Dissipation (PD) at TC — 91 W
引脚数量 — 3 (Gate, Drain, Source)
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes (PBF suffix)
Packaging — Tape & Reel (TR-L), 800-piece leader/trailer

数据手册与资源

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