IRFR3710ZTRPBF vs IRFR540ZTRLPBF Comparison

Detailed side-by-side comparison of IRFR3710ZTRPBF by Infineon and IRFR540ZTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ Active

Specification Comparison

Parameter IRFR3710ZTRPBF IRFR540ZTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.82
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 56 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] 110 A
Gate-Source Voltage (VGS) ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: typical V]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm
Power Dissipation (PD) at TC=25C 140 W
Operating Junction Temperature -55C to +175C -55 °C to +175 °C
Technology HEXFET (IR MOSFET) IR MOSFET™ / HEXFET®
Package TO-252AA (DPAK) TO-252AA (DPAK) surface mount
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant
Lead-Free Yes
Continuous Drain Current (ID) at TC 35 A
Static Drain-Source On-Resistance (RDS(on)) 28.5 mΩ max at VGS=10V
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating]
Total Gate Charge (Qg) 39 nC
Power Dissipation (PD) at TC 91 W
Pin Count 3 (Gate, Drain, Source)
Automotive Qualification AEC-Q101 qualified
Lead-Free / RoHS Yes (PBF suffix)
Packaging Tape & Reel (TR-L), 800-piece leader/trailer

Datasheets & Resources

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