IRFR3710ZTRPBF vs IRFR540ZTRLPBF Comparación
Comparación detallada lado a lado de IRFR3710ZTRPBF por Infineon y IRFR540ZTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR3710ZTRPBF | IRFR540ZTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $0,82 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | 110 A |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: typical V] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55 °C to +175 °C |
| Technology | HEXFET (IR MOSFET) | IR MOSFET™ / HEXFET® |
| Encapsulado | TO-252AA (DPAK) | TO-252AA (DPAK) surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 28.5 mΩ max at VGS=10V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±V rating] |
| Total Gate Charge (Qg) | — | 39 nC |
| Power Dissipation (PD) at TC | — | 91 W |
| Recuento de pines | — | 3 (Gate, Drain, Source) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Packaging | — | Tape & Reel (TR-L), 800-piece leader/trailer |