IRFR3806TRPBF vs IRFH8318TRPBF Vergleich
Detaillierter Direktvergleich von IRFR3806TRPBF von Infineon und IRFH8318TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR3806TRPBF | IRFH8318TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,48 |
| Transistor Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Tc | 43 A | — |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | — |
| Total Gate Charge (Qg) | 22 nC | 41 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | — |
| Gehäuse / Bauform | TO-252AA (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | StrongIRFET™ (N-Channel Trench MOSFET) |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Number of Units in IC | 1 | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Avalanche Rated | Yes (HEXFET family) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH8318TRPBF |
| Continuous Drain Current (ID) at Ta=25°C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 120 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.1 mΩ |
| Power Dissipation (Ta) | — | 3.6 W |
| Power Dissipation (Tc) | — | 59 W |
| Gehäuse | — | PQFN 5x6 (SuperSO8, 8-PowerTDFN) |
| Betriebstemperatur | — | -55°C to +150°C |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| MSL-Level | — | 1 |
| Description | — | Synchronous MOSFET for high-frequency buck converters |